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Award Data
The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Intelligent Solid State Switching
SBC: NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC. Topic: N/AThis project will develop a single integrated intelligent solid state relay utilizing Giant magnetoresistive (GMR) material and advanced solid state power devices. GMR resistors can passively measure the magnetic fields generated by the current through the switch and provide negative feedback to on chip electronics. The electronics will be designed to limit in rush currents, provide a circuit br ...
SBIR Phase I 1997 Department of DefenseAir Force -
High Performance Atomin Nitrogen Source
SBC: OVATION INDUSTRIES, INC. Topic: N/AThe design of an atomic nitrogen source that could greatly improve the quality of nitride materials grown by MBE is proposed. The source will be characterized and tested in Phase I. After completion of this work, a final report will be supplied which summarized the atomic nitrogen production efficiency and other important scientific details. Design refinements of the source will pursued in Phas ...
SBIR Phase I 1997 Department of DefenseAir Force -
Complementary GaAs HBT Technology for Very High Frequency IC's Using Selective Area Regrowth by Molecula
SBC: OVATION INDUSTRIES, INC. Topic: N/AThe development of a two step materials growth process for the low cost production of AlGaAs / GaAs complementary HBT epiwafers is proposed. A new high stability source for carbon doping with CBr4 will be demonstrated and used to grow the p-type layers in both Npn and Pnp device structures that are monolithically integrated on the same semi-insulting substrate.
SBIR Phase I 1997 Department of DefenseAir Force -
Secure Data Sharing
SBC: SECURE COMPUTING CORP. Topic: N/AThis proposal investigates the feasibility of a secure transaction manager (STM) for defining and implementing policies that govern when and how DBMS transactions can be executed. Database management systems and transaction processing systems use the concept of a transaction to organize and control the manner in which application programs can access network resources, including databa ...
SBIR Phase II 1997 Department of DefenseAir Force -
Low Phase Noise, Wideband, Antimonide, DHBT Oscillator MMICs for Millimeter Wave C4I Applications
SBC: SVT ASSOCIATES INC Topic: N/AInnovative low phase noise, wideband oscillator MMICs are proposed for high performance millimeter wave applications. Double heterostructure bipolar transistor (DHBT) deposited by MBE with carbon doped GaAsSb base layers and InP emitter and collector layers will be fabricated and tested under Phase I. Monte Carlo and modified Gummel Soon models will be developed to predict and characterize 1/f noi ...
SBIR Phase I 1997 Department of DefenseAir Force -
MBE Sulfur Passivation of InP for High Power Millimeter Wave Electronics
SBC: SVT ASSOCIATES INC Topic: N/AHigh frequency power semiconductor devices based on metal insulator semiconductor field effect transistor (MISFET) structures have long been desired for microwave and millimeter wave (mm wave) applications. Unfortunately, complex interface defects and Fermi level pinning at the surface of both gallium arsenide (GaAs) and indium phosphide (InP) have impeded technology to control and stabilize MIS s ...
SBIR Phase I 1997 Department of DefenseAir Force -
CHFET Readout Integrated Circuits
SBC: Top-Vu Technology, Inc. Topic: N/ANext generation of infrared focal plane arrays for the Air Force space electronics must be large-format, high data rates, low power dissipation, and high radiation resistance. Gallium arsenide (GaAs) technology advances have shown the capability for producing very large scale integrated (VLSI) circuits for digital computing applications. The intent of this project is to extend this GaAs technolo ...
SBIR Phase I 1997 Department of DefenseAir Force -
A GaN-A1GaN CCD for UV Imaging Applications
SBC: Apa Optics, Inc. Topic: N/AWe propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it's final configuration solar blind. The Phase I program is aimed at establishing the technical feasibility of our device concept. Our proposed CCD is in essence a GaN-AlGaN gated photoconductor with ...
SBIR Phase II 1996 Department of DefenseAir Force -
Low Cost, High Energy Semiconductor Switches
SBC: Aria Corp Topic: N/AThis proposal describes new low cost, low risk semiconductor-based approaches to fuze trigger circuit technology. These innovative approaches build on the promising new technology platform developed by ARIA as part of earlier SBIR research. ARIA's technology platform, initially developed for driving extremely high speed (400 picosecond rise time), high peak current pulses (400A) through laser di ...
SBIR Phase I 1996 Department of DefenseAir Force -
Pre-Award Systems Acquisition Processing System (PASAPS)
SBC: Frontline Solutions Inc Topic: N/AN/A
SBIR Phase I 1996 Department of DefenseAir Force