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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 41 - 50 of 3405 results
  1. AN INNOVATIVE OBSTACLE DETECTION SYSTEM FOR HIGH SPEED GUIDED GROUND TRANSPORTATION

    SBC: Adroit Systems, Inc.            Topic: N/A

    AN INNOVATIVE OBSTACLE DETECTION SYSTEM BASED ON A RAIL-GUIDED PROPELLER-DRIVEN POD CONTAINING A MICROWAVE RADAR SENSOR IS PROPOSED. THE SENSOR POD WILL TRAVEL A FEW MILES AHEAD OF THE HIGH SPEED TRAIN OR MAGLEV VEHICLE, DETECT POTENTIAL OBSTACLES, AND ENACT AN APPROPRIATE WARNING OR AVOIDANCE PROCEDURE. THE PROPOSED OBSTACLE DETECTION SYSTEM HAS MANY HIGHLY DESIRABLE FEATURES INCLUDING: A VERY LO ...

    SBIR Phase I 1992 Department of Transportation
  2. A NOVEL VERY-LOW-COST AIRBREATHING PROPULSION SYSTEM

    SBC: Adroit Systems, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  3. AN OPEN FRAMEWORK FOR SUBSYSTEM INFORMATION SHARING ON THE ESAA FAMILY OF VEHICLES

    SBC: Adroit Systems, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 National Aeronautics and Space Administration
  4. ENHANCED CHROMOPHORE POLYMERIC NLO MATERIALS

    SBC: ADTECH SYSTEMS RESEARCH INC            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  5. NOVEL PROCESS FOR THE BULK GROWTH OF SIC SINGLE CRYSTALS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES WITH WELL-ESTABLISHED SILICON PROCESSING. TECHNOLOGY HAS BEEN DEMONSTRATED FOR PRODUCING OHMIC AND SCHO ...

    SBIR Phase II 1992 Department of DefenseAir Force
  6. NOVEL MOLECULAR SOURCES FOR DISPERSING BORON IN CARBON-CARBON COMPOSITES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    IMPROVING THE OXIDATION RESISTANCE OF CARBON-CARBON COMPOSITES IS KEY TO EXPANDING THE USE OF THIS MATERIAL SYSTEM INTO HIGHER TEMPERATURE APPLICATIONS. WHILE BORON PARTICLES HAVE BEEN ADDED TO THESE MATERIALS TO SEAL CRACKS IN PROTECTIVE COATINGS, OXIDATION OF THE CARBON MATRIX NEIGHBORING THE BORON PARTICLES SERIOUSLY AFFECTS COMPOSITE STRENGTH. THIS PROBLEM IS EXACERBATED BY A NATURAL SEGREGATI ...

    SBIR Phase II 1992 Department of DefenseAir Force
  7. AN ELECTRON BOMBARDED SEMICONDUCTOR DEVICE

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    ELECTRON BOMBARDED SEMICONDUCTOR (EBS) GAIN DEVICES USING SILICON DIODES HAVE APPLICATIONS IN FREQUENCY AGILE, RADIO FREQUENCY (RF)/MICROWAVE POWER AMPLIFIERS, PHOTOMULTIPLIERS,IMAGING TUBES, AND HIGH SPEED SIGNAL PROCESSORS SUCH AS ANALOG-TO-DIGITAL CONVERTERS. HOWEVER, COMMERCIAL ACCEPTANCE OF THESE DEVICES HAS BEEN LIMITED IN THE PAST BECAUSE OF THE DIFFICULTIES IN PROCESSING THE SILICON DIODES ...

    SBIR Phase II 1992 Department of Energy
  8. MOCVD OF HTSC: PROCESS DEVELOPMENT FOR UNIFORM LARGE AREA GROWTH

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SEVERAL METHODS, INCLUDING SPUTTERING, E-BEAM EVAPORATION, LASER ABLATION AND METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD), HAVE SUCCEEDED IN DEPOSITING HIGH QUALITY THIN FILMS OF HIGH TEMPERATURE SUPERCONDUCTORS (HTSC) ON 1 CM2 SUBSTRATES. HOWEVER, THE GROWTH OF HIGH QUALITY THIN FILMS OVER LARGE AREAS HAS YET TO BE ACHIEVED AND PROCESS REPRODUCIBILITY IS MARGINAL. THESE TWO SHORTCOMINGS ARE TH ...

    SBIR Phase II 1992 Department of DefenseArmy
  9. CONTACTS FOR DIAMOND SEMICONDUCTOR DEVICES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SEMICONDUCTOR DEVICES THAT PROVIDE RELIABLE HIGH POWER OR OPERATE AT EXTREMELY HIGH FREQUENCY IN HARSH ENVIRONMENTS SUCH AS SUSTAINED HIGH RADIATION LEVELS ARE REQUIRED FOR ASAT APPLICATIONS. THIS NEED FOR DEVICES THAT CAN OPERATE AT INCREASED TEMPERATURES OR WITH MINIMUM RADIATIVE COOLING HAS BEEN SPAWNED BY THE SIGNIFICANT ENGINEERING PROBLEMS ASSOCIATED WITH THE COOLING REQUIREMENTS OF ELECTRON ...

    SBIR Phase II 1992 Department of DefenseArmy
  10. FERROELECTRIC MATERIAL FOR ULSI DEVICES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    EXPLOITATION IN MICROELECTRONICS OF THE VERY HIGH DIELECTRIC CONSTANTS OF FERROELECTRIC PEROVSKITES SUCH AS BATIO3 AND PZT HAS BEEN LIMITED BY MATERIALS PROCESSING AND COMPATIABILITY PROBLEMS. HIGH QUALITY FERROELECTRIC THIN FILMS HAVE NOT BEEN GROWN AT TEMPERATURES COMPATIABLE WITH STANDARD SI OR GAAS PROCESSING TECHNOLOGIES. A HUGE PAYOFF AWAITS ONE WHO CAN UNLOCK THE POTENTIAL OF FERROELECTRIC ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency
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