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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  2. Integrated software toolbox for aeroelastic modeling and dynamic stability analysis of a Generic Hypersonic Vehicle

    SBC: Scientific Systems Company Inc.            Topic: N/A

    Aeroservoelastic (ASE) modeling and vehicle stability analysis are twomajor concerns in the accurate prediction of flight characteristics ofgeneric hypersonic vehicles (GHVs). We propose to develop an ASE modelingand vehicle stability analysis toolkit. System Identification (SI)-basedblack box models of CFD solvers is the primary focus in Phase I.Bifurcation and Chaos Theory Methodology (BACTM) is ...

    STTR Phase I 2001 National Aeronautics and Space Administration
  3. Novel heterojunction diodes for High Power Electronics

    SBC: PHOTRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  5. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  6. Rapid Prototyping and Manufacturing with Ultrasonic Tape Layered Object Manufacturing (UTLOM)

    SBC: FOSTER-MILLER, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 National Aeronautics and Space Administration
  7. High Temperature Microfabricated Sensors for Aircraft Gas Turbines

    SBC: FOSTER-MILLER, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 National Aeronautics and Space Administration
  8. Polyimide Spray-Foaming Process

    SBC: RESODYN CORPORATION            Topic: N/A

    N/A

    STTR Phase I 1999 National Aeronautics and Space Administration
  9. Unity Power Factor Interfacefor Data Processing Equipment

    SBC: Mse Technology Applications, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 National Aeronautics and Space Administration
  10. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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