Award Data

THE UNCERTAINTY IN MEASURING NEUTRON DOSE EQUIVALENT RATES RESULTS IN UNCERTAINTY IN ASSIGNMENT OF THE PROPER DOSE TO OCCUPATIONAL RECORDS AND CAN RESULT IN IMPROPER IMPLEMENTATION OF CONTROLS TO LIMIT THE EXPOSURE. A NOVEL PORTABLE NEUTRON SPECTROMETER IS PROPOSED WHICH WILL REDUCE THE UNCERTAINTY OF SUCH MEASUREMENTS TO LESS THAN 20%. MANYCOMPONENTS OF THIS DEVICE ARE COMMERCIALLY AVAILABLE. SYS ...

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Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

AN ARRAY COMMUNICATIONS COPROCESSOR (ACC) ARCHITECTURE HAS BEEN DEVELOPED THAT PROVIDES AUTOMATIC, ADAPTIVE, AND DYNAMICALLY CONFIGURABLE INTER-PROCESSOR COMMUNICATIONS AND IS COMPATIBLE WITH MOST COMMERCIALLY AVAILABLE STATE-OF-THE-ART COMPLEX INSTRUCTION SET COMPUTERS (CISC) AND REDUCED INSTRUCTION SET COMPUTERS (RISC). IN THIS INVESTIGATION, THE ARRAY COMMUNICATIONS CONTROLLER IS BEING IMPLEMEN ...

Silicon and gallium arsenide cannot meet some of the power, frequency, temperature and speed requirements of the next generation of electronic devices. Therefore, alternative semiconductor materials for electronic devices must be developed. Silicon carbide has many required properties such as wide bandgap, high breakdown field, high electron saturation velocity, and physical strength making it at ...

Controlled doping of silicon carbide (SiC) during epitaxial growth remains a significant problem due to the amphoteric nature of many dopants and competition for active sites between the dopants, silicon and carbon atoms. Currently, the most promising avenue for controlled doping of SiC is a process called site competition epitaxy which is a technique based on adjusting the SitC ratio within the g ...

A HIGH VOLTAGE PULSE GENERATOR TECHNOLOGY IS BEING DEVELOPEDFOR PRACTICAL BEAM ACCELERATORS, PULSED X-RAY SOURCES AND OTHER PULSE POWER APPLICATIONS. THE SPECIFIC TECHNOLOGYCAPABILITY IS SHORT PULSE WIDTH (10-250 NSEC), HIGH VOLTAGE PULSE (1 MV AND ABOVE) DELIVERED AT A HIGH REPETITION RATE (1 MHZ AND ABOVE). IN THIS PROGRAM THE TECHNOLOGY PERFORMANCE IS BEING INVESTIGATED AND A SMALL SCALE PROOF ...

The advanced technology described in this proposal promises to increase the performance of laboratory and, specifically, tabletop x-ray lasers by up to an order of magnitude. Such gains in performance coupled with compact technology will lead to the introduction of the world s first table-top, commercial x-ray laser. Tetra proposes to develop an advanced driver for the laboratory laser based upo ...