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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Microchannel Plate Imaging Neutron Detector

    SBC: NOVA SCIENTIFIC INCORPORATED            Topic: N/A

    One highly desired improvement for neutron sensing is an imaging neutron detector with high two-dimensional spatial resolution and a large detector area. At present, achievable real-time neutron imaging detector resolution is only about 1 mm. The innovation proposed is to adapt for neutron imaging the high spatial resolution Microchannel Plate (MCP) detector technology so widely used for detecting ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  2. Lossless Beam Splitters Based on Rare-Earth Doped Fluoride Films

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    Phase I seeks to develop lossless beam splitters in a planar integrated optical waveguide form for optical signal processing. We propose to construct lossless beam splitters based on a planar integrated optical waveguide form for the applications at 1.55 um. The proposed device consists of a beam splitter part and an optical amplification part. The device will be built on Er-doped fluoride glass f ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  3. Ternary Nitride Semiconductors as Nonlinear Optical Materials

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    NZ Applied Technologies proposes to develop plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) to create optically clear single crystal films of several unexplored ternary nitride semiconductors to study their nonlinear optical properties, and to use them for frequency doubling of visible and near IR lasers into wavelengths ranging from green to violet. Ternary nitrides appear to be ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  4. MOCVD Growth of Epitaxial GaN on Lattice-Matched Substrates

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    The III-V nitride semiconductor family affords many unique properties which make these materials attractive candidates for producing electronic and optoelectronic devices. Much progress has been made in epitaxial thin film growth of nitrides using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) during the last decade. These efforts are hindered by the lack of lattic ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  5. Title missing

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  6. Soft X-Ray Collimating Optics

    SBC: PARALLAX RESEARCH INC            Topic: N/A

    Parallax Research Inc. proposes to develop practical collimating optics for soft x-ray lasers and elemental analyses applications. Although there is no new physics involved in the operation of these optics, the ability to fabricate them economically is a recent innovation. These optics are intended to accept broad energy bandwidths of low energy x-rays diverging from a small source and re-direct t ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  7. In-Situ Phosphorus Injection Synthesis for Single Crystal Growth of Semiconducting and Electro-Optic Phosphides

    SBC: Parke Mathematical            Topic: N/A

    Phosphides are growing in importance in the area of semiconductor, photo-voltaic, solar energy, microwave and optoelectronic devices. Indium phosphide is a well known semiconductor with application as a laser diode in fiberoptic communication and as a substrate for MMIC and MAFET devices for ultrahigh speed communication, computing and integrated electro-optics. InP also displays the photorefract ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  8. High Resolution Miniature AMEL Display for Simulation HMDs

    SBC: PHYSICAL SCIENCES INC.            Topic: N/A

    N/A

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  9. Title missing

    SBC: PLEX LLC            Topic: N/A

    N/A

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  10. Hybrid Semiconductor-Organic Electroluminesent Device

    SBC: Quantum Energy Technologies Corp            Topic: N/A

    To date, studies of photoluminescence (PL) from mesoscopic semiconductors have focused on the size of the quantum dots. This effort places equal emphasis on the details of the nonlinear bonding dynamics of the elements comprising the dots. Nanotextured materials with nonlinear bonding dynamics develop energy localization phenomena that allow for selective excitation of vibrational modes that relax ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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