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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 51 - 60 of 3189 results
  1. THIN FILM WSE2 PHOTOELECTRODES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    A PRIMARY LIMITATION OF PHOTOELECTROCHEMICAL CELLS IS PHOTOCORROSION OF ELECTRODE MATERIALS. ONE SOLUTION TO THISPROBLEM HAS BEEN TO APPLY ELABORATE CONDUCTING POLYMERIC COATINGS TO SENSITIVE ELECTRODES. AN ALTERNATIVE IS TO USE CORROSION RESISTANT ELECTRODE MATERIALS. GROUP VI METAL DICHALCOGENIDES, AND TUNGSTEN DISELENIDE (WSE2) IN PARTICULAR, HAVE SHOWN PROMISE AS INTRINSICALLY CORROSION RESIST ...

    SBIR Phase I 1990 Department of Energy
  2. RECYCLABLE MOLDS FOR CASTING NUCLEAR FUEL

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    RECYCLING SPENT NUCLEAR FUEL IS AN ECONOMIC NECESSITY FOR THE INTEGRAL FAST REACTOR. AFTER THE FISSION PRODUCTS HAVE BEEN REMOVED, THE IRRADIATED URANIUM FUEL MATERIAL CAN BE CAST INTO NEW FUEL RODS. THE CURRENT INJECTION CASTING PROCESS USES QUARTZ MOLDS THAT ARE NOT REUSABLE, SINCE THE MOLDS MUST BE BROKEN TO REMOVE THE CAST FUEL ROD. THE BROKEN MOLDS ARE RADIOACTIVE WASTE. HOWEVER, APPLICATION ...

    SBIR Phase II 1990 Department of Energy
  3. COMPOSITE HIGH TC SUPERCONDUCTIVE BOLOMETER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE DISCOVERY OF THE NEW HIGH TEMPERATURE SUPERCONDUCTING (HTSC) OXIDES COUPLED WITH THE ADVENT OF DIAMOND THIN FILM GROWTH BY CHEMICAL VAPOR DEPOSITION TECHNIQUES HAVE OPENED UP THE POSSIBILITY OF A HIGH TEMPERATURE SUPERCONDUCTING TRANSITION EDGE BOLOMETER FOR USE AT SUBMILLIMETER WAVE LENGTHS. PRESENT DETECTOR TECHNOLOGY FOR THE SUBMILLIMETER WAVE REGION CONSISTS OF LOW SENSITIVITY, ROOM TEMPER ...

    SBIR Phase II 1990 National Aeronautics and Space Administration
  4. UNSYMMETRICAL TELLURIDES AS NOVEL METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) REAGENTS FOR TELLURIUM ALLOYS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    LOW GROWTH TEMPERATURES ARE ESSENTIAL FOR THE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) OF ABRUPT HETEROJUNCTION DEVICES FABRICATED FROM MERCURY CADMIUM TELLURIDE. UNSYMMETRICAL TELLURIDES (RTER< >1D) REPRESENT A NOVEL ALTERNATIVE TO THE NON-OPTIMAL SOURCE REAGENTS CURRENTLY IN USE. THESE UNSYMMETRICAL TELLURIDES WILL HAVE INCREASED VOLATILITY WHILE MAINTAINING LABILE TELLURIUM-CARBON BONDS ...

    SBIR Phase II 1990 National Science Foundation
  5. MOLECULAR CHEMISTRY OF THE SUPERCONDUCTOR-SUBSTRATE INTERFACE

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE KEY TO THE COMMERCIAL PRODUCTION OF DEVICES FABRICATED FROM SUPERCONDUCTORING THIN FILMS WITH OPTIMAL AND REPRODUCIBLE PROPERTIES IS THE IDENTIFICATION OF A PROCESS THAT HAS EXACT CONTROL OF STOICHIOMETRY AND MORPHOLOGY. THIS CONTROL CAN ONLY BE ACHIEVED WITH A THOROUGH UNDERSTANDING OF THE CHEMISTRY AT THE SUPERCONDUCTOR-SUBSTRATE INTERFACE WHICH SERVES AS THE TEMPLATE FOR THE GROWING FILM. T ...

    SBIR Phase II 1990 National Science Foundation
  6. CW LASER MODULATOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    RECENT DEVELOPMENTS IN OPTICAL COMMUNICATION TECHNOLOGY ARE VERY ENCOURAGING FOR THE POTENTIAL OPERATION OF OPTICAL SATELLITE CROSSLINKS. MOST NOTABLE IS THE DEVELOPMENT OF HIGH EFFICIENCY ND:YAG RING LASERS WHICH WOULD BE ATTRACTIVE TRANSMITTERS IF WIDE BANDWIDTH EXTERNAL PHASE MODULATORS COULD BE DEVELOPED. A TRAVELING-WAVE CONFIGURATION GIVES THE MAXIMUM BANDWIDTH FOR ELECTRO-OPTIC MODULATORS. ...

    SBIR Phase I 1990 Department of DefenseAir Force
  7. SCHOTTKY AND OHMIC CONTACTS FOR B-SILICON CARBIDE

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    HIGH POWER SEMICONDUCTORS USING SILICON AND GAAS ARE LIMITED TO ENVIRONMENTS THAT ARE LESS THAN 300 DEG C IN TEMPERATURE DUE TO LOW BANDGAPS, LOW BREAKDOWN FIELDS AND LOW THERMAL CONDUCTIVITIES. 3C-SIC(B-SIC) HAS BEEN IDENTIFIED AS A MATERIAL WITH EXCELLENT POTENTIAL TO FULFILL THE REQUIREMENTS OF A HIGH POWER, HIGH TEMPERATURE SEMICONDUCTOR WITH HIGH RADIATION HARDNESS. THE KEY TO DEVELOPING DEVI ...

    SBIR Phase I 1990 Department of DefenseAir Force
  8. PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF YTTRIUM BARIUM COPPER OXIDE SUPERCONDUCTING MATERIAL

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE REPRODUCIBLE CRYSTAL GROWTH OF THIN FILMS WITH THE CORRECT STOICHIOMETRY AND APPROPRIATE MORPHOLOGY IS THE KEY TO THE COMMERCIALIZATION OF DEVICES INCORPORATING THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS. MOCVD HAS THE POTENTIAL TO MEET THESE NEEDS COUPLED WITH RELATIVE EASE OF SCALING TOMANUFACTURING VOLUMES. HOWEVER, RECENT WORK ON MOCVD HAS BEEN PLAGUED BY TWO MAJOR LIMITATIONS: (1.) FILMS ...

    SBIR Phase I 1990 National Science Foundation
  9. DIAMOND X-RAY DETECTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    A NOVEL DIAMOND DETECTOR FOR USE IN THE SOFT X-RAY TO THE VACUUM ULTRAVIOLET IS PROPOSED. THIS X-RAY DETECTOR IS BASED ON THE USE OF A DIAMOND FILM AS THE ACTIVE DETECTOR ELEMENT DUE TO DIAMOND'S HIGH INTRINSIC RESISTIVITY (LOW DARK CURRENT), LARGE CARRIER MOBILITIES, HIGH SATURATEDCARRIER DRIFT VELOCITY AND RADIATION AND CHEMICAL CORROSION RESISTANT CHARACTERISTICS. BECAUSE OF THESE CHARACTERISTI ...

    SBIR Phase I 1990 Department of Energy
  10. PHOTOCONDUCTIVE SWITCH FOR PULSED POWER HIGH FIELD GRADIENT LINAC&#039;S

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    ULTRAFAST SOLID STATE PHOTOCONDUCTIVE SWITCHES MAY NOW MAKE POSSIBLE PULSED ELECTRIC FIELDS ON THE ORDER OF 1GV/M ON TIME SCALES OF 1-100 PICOSECONDS. VOLTAGE GRADIENTS OF THISMAGNITUDE ARE BECOMING POSSIBLE THROUGH ADVANCES IN TRANSMISSION LINE DESIGN AND ULTRAFAST PHOTOCONDUCTIVE POWERSWITCHING TECHNOLOGY AND WILL PERMIT SIGNIFICANT ADVANCES INPRODUCING HIGHER ENERGY, COMPACT LINEAR ACCELERATORS ...

    SBIR Phase I 1990 National Science Foundation
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