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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 61 - 70 of 711 results
 
  • Record 1 TO 711

  1. ATOMIC LAYER EPITAXY OF BORON NITRIDE

    SBC: Apa Optics, Inc.            Topic: N/A

    WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPITAXY PROCESS. THIS WE FEEL WILL REDUCE THE SINGLE CRYSTAL EPITAXY TEMPERATURE VALUES CLOSE TO 1400C. WE ALSO PROPOSE TO USE A UNIQUE MULTILAYER BUFFERING PROCEDURE TO DECREASE THE INTERFACE DEFECTS RES ...

    SBIR Phase I 1992 Department of DefenseAir Force

  2. Novel Doping Sources for III-V Molecular Beam Epitaxy

    SBC: Essential Research, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force

  3. DEVELOPMENT OF MEMBRANE SAMPLING SYSTEM TO CONCENTRATE TOXIC ENVIRONMENTAL COMPOUNDS FOR RAMAN SPECTROSCOPY ANALYSIS

    SBC: NeoMecs Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force

  4. A SEMI-AUTOMATED DOWNGRADER FOR MLS NETWORK GUARDS

    SBC: SECURE COMPUTING CORP.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force

  5. PRE-FORMED SOLENOID MAGNETS FROM HI-TC SUPERCONDUCTORS

    SBC: Superconix, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 National Aeronautics and Space Administration

  6. AUTOMATED MBE PROCESS WITH REAL TIME SENSOR CONTROL

    SBC: SVT ASSOCIATES INC            Topic: N/A

    WE PROPOSE AN AUTOMATED MOLECULAR BEAM EPITAXY (MBE) PROCESS FOR REPRODUCTABLE GROWTH OF SEMICONDUCTOR DEVICE STRUCTURES. WE WILL APPLY RHEED AND THERMAL OSCILLATION TECHNIQUES TO CONTROL THE RATE ANDCOMPOSITION OF THE LAYERS AND TO ENSURE THAT THE GROWTH PROCEEDS UNDEROPTIMUM CONDITIONS. A MASS SPECTROMETER WILL BE USED TO CONTROL DOPANT INCORPORATION LEVELS. FLUXES FOR OPTIMUM GROWTH OF THE DIFF ...

    SBIR Phase II 1992 Department of DefenseAir Force

  7. STRAINED TYPE II SUPERLATTICE INFRARED DETECTORS

    SBC: SVT ASSOCIATES INC            Topic: N/A

    THIS PROJECT WILL INVESTIGATE THE OPTICAL PROPERTIES OF A RECENTLY INVENTED CLASS OF TYPE-II, STRAINED-LAYER SUPERLATTICES MADE OF GAAS RELATED COMPOUNDS. THE NEW CONCEPT HAS ADVANTAGES, COMPARED WITH PREVIOUS EFFORTS, IN THAT SMALL BAND GAPS MAY BE ACHIEVED WITH SUFFICIENTLY THIN REPEATING LAYERS IN THE SUPERLATTICES. AS A RESULT, THEY HAVE GOOD OPTICAL-ABSORPTION PROPERTIES AND FAVORABLE ELECTRI ...

    SBIR Phase II 1992 National Aeronautics and Space Administration

  8. PRECISE FLUX CONTROL FOR LATTICE MATCHED SUPERLATTICE MATERIALS

    SBC: SVT ASSOCIATES INC            Topic: N/A

    AN EFFECTIVE METHOD FOR REDUCING FLUX TRANSIENTS IN MOLECULAR BEAM EPITAXY (MBE) EFFUSION CELL SOURCE IS PROPOSED. MBE IS A USEFUL TECHNIQUE FOR FABRICATING MANY IMPORTANT ELECTRONIC AND OPTOELECTRONIC DEVICES WHOSE PERFORMANCE DEPENDS CRITICALLY ON REPRODUCIBLE MATERIAL STRUCTURES. TIGHT CONTROL OF THE STRUCTURES IS OFTEN HINDERED BY FLUX TRANSIENTS DURING SOURCE SHUTTER OPERATION. WE PROPOSE A M ...

    SBIR Phase I 1992 Department of DefenseAir Force

  9. Carbon and Tellurium Doping Sources for Molecular Beam Epitaxy (MBE)

    SBC: SVT ASSOCIATES INC            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force

  10. A Phototransistor Based on GaN-A1xGa1-xN Heterostructure

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose to demonstrate the feasibility of fabricating a phototransistor using the A1xGa1-xN material system. The proposed phototransitor is based on a GaN-A1xGa1-xN heterojunction which exhibits a 2-D electron gas conduction when a bias is applied on the source-drain terminals. The device is maintained in a nominally OFF state by applying a reverse bias voltage on the gate terminal. With optica ...

    SBIR Phase I 1993 Department of DefenseAir Force
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