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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. AlGaP/GaP Heterostructure Ultraviolet Detector

    SBC: ASTROPOWER, INC.            Topic: N/A

    AstroPower is developing a highly sensitive UV detector based on epitaxial AlGaP/GaP heterostructures, a promising new material system for ultraviolet detectors. Detecting ultraviolet light is important to spectrophotometry, astronomy, high-energy physics, medicine, UV curing, photoresist exposure, and chemical processes. The large bandgap and crystalline quality of gallium phosphide will provide ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  2. AlInGaN-based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates

    SBC: Sensor Electronic Technology, Inc.            Topic: N/A

    We propose to develop technology for manufacturing deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250 nm. Blue and near UV (wavelength > 370 nm) light emitters are based on GaN/InGaN material system. In Phase I, wewill demonstrate LD structures with dislocation density below 107 cm-2, electroluminescence peak at 250 nm and stimulated emission at 250 nm und ...

    SBIR Phase I 2002 Department of DefenseDefense Advanced Research Projects Agency
  3. AlInGaN-Based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates

    SBC: Sensor Electronic Technology, Inc.            Topic: SB022043

    To develop technology for manufacturing of deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250nm.

    SBIR Phase II 2004 Department of DefenseDefense Advanced Research Projects Agency
  4. AlInGaN-based Epi for High Power Double Heterostructure Field Effect Transistors On Semi-insulating 6H-SiC Substrates

    SBC: Sensor Electronic Technology, Inc.            Topic: N/A

    "We will develop commercially viable quaternary AlInGaN-based epitaxial wafer technology on semi-insulating 6H-SiC for manufacturing of reliable high microwave power transistors and amplifiers for new generation of radars and wireless communication systems.We will use our proprietary growth technology and unique buffer layer design to deposit quaternary AlInGaN-based Double Heterostructure Field E ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  5. AlInGaN MOSHFET Power Converters

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA08029

    We propose to develop and commercialize III-Nitride insulated gate MOSHFET-based power converters for radar T/R modules power supplies. Based on our experience in high power III-N MOSHFET development and figures of merit discussed below, we strongly believe that this device is the most promising for achieving the best combination of low ON-resistance, high operating voltage and high switching freq ...

    SBIR Phase I 2009 Department of DefenseMissile Defense Agency
  6. AlInN/GaN heterostructures for X-band RF power amplification

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA08024

    SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. In Phase I, we successfully demonstrated MEMOCVD® growth of AlInN/GaN structures with Ga-free AlInN, the record sheet electron concentration and the record-breaking HFETs with peak drain currents ex ...

    SBIR Phase II 2010 Department of DefenseMissile Defense Agency
  7. AlInN/GaN heterostructures for X-band RF power amplification

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA08024

    SETI proposes to develop and commercialize innovative technology for AlInN/GaN heterostructure growth and metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) fabrication for the high power X-band operation. Our technical approach is based on the proprietary and patented MEMOCVD® growth technology which allows for high quality III-Nitride epitaxial material deposition at re ...

    SBIR Phase I 2009 Department of DefenseMissile Defense Agency
  8. AlInN/GaN HFET over Free-Standing bulk GaN substrates

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA09T001

    SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial growth on native substrate and the use of AlInN/GaN ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  9. AlInN/GaN HFET over Free-Standing bulk GaN substrates

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA09T001

    This proposed research for Phase II consideration involves the growth of AlInN/GaN heterostructure field effect transistors (HFET) on bulk GaN substrates. By combining a homoepitaxial substrate for the growth of the heterostructures with the lattice-matching ability of the AlInN alloy, it is expected that the defect density in the eventual HFETs can be reduced significantally, ultimately improvin ...

    STTR Phase II 2012 Department of DefenseMissile Defense Agency
  10. AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

    SBC: NITEK, INC.            Topic: MDA08029

    The goal of the Phase I program is to demonstrate the feasibility of a high-voltage, high-temperature insulating gate AlInN-GaN/i-SiC enhancement-mode HEMT to serve as the basic building block of a power converter/inverter. Our technical approach is to use lattice matched AlInN-GaN epilayers in conjunction with a field-plated insulating gate HEMT device design and a fluorine treatment to accompli ...

    SBIR Phase I 2009 Department of DefenseMissile Defense Agency
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