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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Thin-film Nonlinear Optical Material: Ordered Ga(1-x)In(x)P On GaAs

    SBC: Spire Corporation            Topic: N/A

    GROWTH OF OEDERED Ga(1-x)In(x)P ON GaAs, AS A THIN FILM MATERIAL SHOWING VERY STRONG NONLINEAR OPTICAL (nlo) EFFECTS, WILL BE ACCOMPLISHED BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD). IT IS WELL KNOWN THAT MOCVD-GROWN Ga(1-x)In(x)P DISPLAYS VERY STRONG ORDERING OF THE Ga- AND In-SUBLATTICES, AND THAT DEGREE OF ORDERING IS CONTROLLED BY GROWTH PARAMETERS. STRONG ORDERING SHOULD LEAD TO THE LA ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  2. MOCVD OF INT1SB FOR LONG-WAVELENGTH IR DETECTORS

    SBC: Spire Corporation            Topic: N/A

    Spire proposes to design and fabricate In(-1-x)Tl(-x)Sb long-wavelength (8 to 12 micrometers) infrared detectors. Theoretical calculations predict that InTlSb offers many potential advantages over HgCdTe and III-V quantum well infrared photodetectors (QWIP). Its higher mechanical strength and better compositional uniformity promise improved focal plane array performance and yield. Also, since it i ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  3. Heterojunction Bipolar Transistors Featuring Epitaxial ZnGeN

    SBC: Spire Corporation            Topic: N/A

    SPIRE PROPOSES TO DEVELOP FOR THE FIRST TIME DEPOSITION TECHNIQUES FOR CREATING THIN FILMS OF ZnGeN(2) OF HIGH CRYSTALLINE PERFECTION TO SERVE AS THE BASE IN HIGH TEMPERATURE HETEROJUNCTION TRANSISTORS. THE FINAL TRANSISTOR STRUCTURE, TO BE DEMONSTRATED IN PHASE II, WILL RELY ON GALLIUM NITRIDE (GaN) AS THE EMITTER AND COLLECTOR SECTIONS. ZnGeN(2) IS AN EXCELLENT CANDIDATE FOR SERVING AS THE TRANS ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  4. STOICHIOMETRY CONTROL IN SEMI-INSULATING GALLIUM ARSENIDE

    SBC: Ware Technical Services, Inc.            Topic: N/A

    We propose to use the 'double-crucible' technique to grow semi-insulating gallium arsenide crystals which are of uniform stoichiometric composition from seed to tail, and are free from arsenic precipitaties. The nature of the phase diagram suggests that this approach should be very effective in GaAs, and the Principal Investigator has already established to use of the double crucible method in Liq ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  5. METAL-METAL MICROFILAMENTARY COMPOSITES FOR HIGH CURRENT ELECTRICAL CONDUCTOR APPLICATIONS

    SBC: EIC LABORATORIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1985 Department of DefenseMissile Defense Agency
  6. INTERCEPTOR BLINDING FROM ATMOSPHERE INDUCED EMISSIONS

    SBC: Physical Sciences Inc.            Topic: N/A

    N/A

    SBIR Phase I 1985 Department of DefenseMissile Defense Agency
  7. SURFACE DISCHARGE AS AN INCOHERENT PUMP SOURCE FOR SOLID STATE LASERS

    SBC: Schafer Corporation            Topic: N/A

    N/A

    SBIR Phase I 1985 Department of DefenseMissile Defense Agency

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