You are here

Home » Reports

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

Displaying 61 - 70 of 112 results
 
  • Record 1 TO 112

  1. COMPACT LIGHTWEIGHT CO2 LASERS FOR STRATEGIC DEFENSE APPLICATIONS

    SBC: Science Research Laboratory, Inc            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency

  2. LASER PULSE FORMATTING TO REDUCE THERMAL BLOOMING BY AEROSOL VAPORIZATION

    SBC: Science Research Laboratory, Inc            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency

  3. High speed, random optical switching, using Fabry-Perot Holographic circle-to-point Conversion

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A solid-state, dense, random optical cross-switch is commercializedto fill needs in the commercial metro-core telecom market, and to supplyrapid, multi-channel, covert, and frequency agile optical communications tothe national missile defense initiative. The optical switch is based uponFabry-Perot and Holographically Dispersed Liquid Crystal (H-PDLC) technology.The deliverable is entirely solid s ...

    SBIR Phase II 2002 Department of DefenseMissile Defense Agency

  4. Deep-Level-Free SiC Semi-Insulating Buffer Layers for High-Power RF Transistors 02-014A

    SBC: SemiSouth Laboratories            Topic: N/A

    "SemiSouth proposes a proprietary technology involving the passivation of one type of shallow acceptor impurity to achieve precision compensation of the opposite type of shallow donor impurity. This Phase I feasibility demonstration represents aninnovative breakthrough in deep-level-free semi-insulating (SI) buffer layers for high-performance, economical silicon carbide radio-frequency (RF) MEtal ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency

  5. Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

    SBC: SemiSouth Laboratories            Topic: N/A

    SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combining with SiC power devices, a high level of integration,reduced parts count, reduced cost and weight in satellite systems. SemiSouth Laboratories, Inc. plans to transfer critical JFET IC technology d ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency

  6. SiC Optical Telescope for Next Generation Midcourse Interceptors

    SBC: SSG, Inc.            Topic: N/A

    "Advanced seeker systems for endo- and exo-atmospheric applications will utilize infrared and visible signature of ballistic threats in addition to LADAR ranging and imaging information for improved identification, discrimination and tracking. This futurecapability requires diffraction limited near visible performance for the optical system, while still maintaining the low cost production capabil ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency

  7. Thick Multi-Layer Insulation (MLI) System and Design Software Tool

    SBC: Sierra Lobo, Inc.            Topic: N/A

    "A thick multilayer insulation (MLI) system is proposed for meeting the cryogenic fluid storage requirements of future space missions. This thick MLI system will be an integration of the most promising new technologies and advances in materials,fabrication processes, assembly techniques, and supplemental components. As a primary part of the proposed effort, an MLI software design tool will be co ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency

  8. DEPOSITION OR INP ON SI SUBSTRATES FOR MONOLITHIC INTEGRATION OF ADVANCED ELECTRONICS

    SBC: Spire Corporation            Topic: N/A

    A PROCESS IS BEING DEVELOPED FOR THE HETEROEPITAXIAL GROWTH OF INP ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION. DUE TO ITS ELECTRON SATURATED DRIFT VELOCITY AND RADIATION RESISTANCE, INP ISAN EXCELLENT MATERIAL FOR USE IN HIGH SPEED ELECTRON DEVICES AND SPACEAPPLICATIONS. SILICON IS AN OPTIMAL SUBSTRATE MATERIAL DUE TO THE AVAILABILITY OF HIGH PURITY, LARGE AREA, LOW COST WAFER ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency

  9. Filterless Multicolor Image Sensors on SOI Structures

    SBC: Spire Corporation            Topic: N/A

    "Spire proposes to develop high-efficiency filterless silicon-based multi-color photodiode arrays suitable for spectroscopy and imaging applications in the UV to near-IR bands. The innovation, patented by Spire, is the use of a thin filmsilicon-on-insulator (SOI) structure in the active device region, which enables fabrication of wavelength-selective photodiodes. In these devices, the long cut-o ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency

  10. SELECTIVE-AREA EPITAXY OF GALLIUM ARSENIDE ON SILICON

    SBC: Spire Corporation            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government