You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. FAILURE INVESTIGATION OF CERAMIC ARMOR BACKED BY ALUMINUM OR ALUMINUM MATRIX COMPOSITE SUPPORT-PLATES

    SBC: Lanxide Corporation            Topic: N/A

    IT IS PROPOSED THAT THE BALLISTIC PERFORMANCE OF TIB2 CERMAIC ARMOR TILES BACKED UP BY A VARIETY OF LIGHTWEIGHT SUPPORT-PLATES BE INVESTIGATED BY 1MEV FLASH X-RAY EQUIPMENT DURING PENETRATION, AND BY MACROSCOPIC AND MICROSCOPIC OBSERVATIONS OF RECOVERED TARGETS. THE SUPPORT-PLATE TEST MATRIX INCLUDES TWO MATERIALS (A STRUCTURAL ALUMINUM ALLOY AND A CERAMIC REINFORCED ALUMINUM MATRIX COMPOSITE), TW ...

    SBIR Phase I 1991 Department of DefenseDefense Advanced Research Projects Agency
  2. INVESTIGATION OF STRESS WAVES AND FAILURE PHENOMENOLOGY IN ALUMINUM METAL MATRIX COMPOSITE AND TIB2 LAMINATED ARMOR

    SBC: Lanxide Corporation            Topic: N/A

    TO UNDERSTAND BETTER HOW LAMINATED CERAMIC ARMOR PERFORMS, IT IS PROPOSED TO INVESTIGATE THE EFFECT OF THE IMPEDANCE MISMATCH AND INTERLAYER BOND STRENGTH (BETWEEN AI(2)0(3) REINFORCED ALUMINUM MATRIX COMPOSITES AND TIB(2)) ON STRESS WAVE PROPAGATION AND PENETRATION PHENOMENOLOGY DUE TO LONG ROD IMPACT. LANXIDE'S UNIQUE PROCESSING TECHNOLOGIES WILL BE USED TO FORM A STRONG METALLURGICAL BOND AT TH ...

    SBIR Phase I 1991 Department of DefenseDefense Advanced Research Projects Agency
  3. NOVEL CERAMIC/METAL COMPOSITES FOR ARMOR APPLICATIONS

    SBC: Lanxide Corporation            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseDefense Advanced Research Projects Agency
  4. PERSONNEL STATUS MONITOR

    SBC: STERLING RESEARCH CORPORATION            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseDefense Advanced Research Projects Agency
  5. FLEXIBLE, DEFORMABLE SURFACES FORMED FROM ARRAYS OF SUB-MILLIMETER SIZED, LINEAR ELECTROMECHANI....

    SBC: STERLING RESEARCH CORPORATION            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseDefense Advanced Research Projects Agency
  6. FET-BASED HYDROPHONE SENSORS

    SBC: STERLING RESEARCH CORPORATION            Topic: N/A

    IN THE COURSE OF THEIR WORK IN MICROSENSORS, MICROACTUATORS, AND ROBOTICS, SRC AND ITS ASSOCIATES HAVE DEVELOPED A NUMBER OF UNIQUE FIELD-BASED SENSORS UTILIZING FIELD EFFECT TRANSISTORS (FETS). BECAUSE THESE SENSORS EXHIBIT HIGH SENSITIVITY AND EXCELLENT LOW FREQUENCY RESPONSE AND AFFORD THE POSSIBILITY OF DIGITAL OUTPUT SIGNALS, THEY OFFER ADVANTAGES OVER CONVENTIONAL PIEZOELECTRIC OR FERROELECT ...

    SBIR Phase I 1990 Department of DefenseDefense Advanced Research Projects Agency
  7. STRUCTURED GAAS DESIGN TOOL

    SBC: BONNEVILLE SCIENTIFIC, INC.            Topic: N/A

    INTEREST IN GALLIUM ARSENIDE (GAAS) INTEGRATED CIRCUITS (IC) IS GROWING RAPIDLY BECAUSE THEY ARE VERY FAST AND RESISTANT TO RADIATION.HOWEVER, SOME SIGNIFICANT PROBLEMS ARE STILL OF CONCERN. FIRST, THE INCREASED SPEED OF THIS TECHNOLOGY HAS LED TO TIMING PROBLEMS IN CIRCUIT DESIGN. WITH THIS TECHNOLOGY THE GATE SWITCHING SPEEDS HAVE BEEN REDUCED TO WHERE THEY CAN BE EQUIVALENT TO THE WIRE TRANSMIS ...

    SBIR Phase I 1988 Department of DefenseDefense Advanced Research Projects Agency
  8. MONOLITHIC GAAS LIGHT-EMITTING DIODES ON SILICON VLSI CIRCUITS ELEMENTS

    SBC: ASTROPOWER, INC.            Topic: N/A

    OPTOELECTRONIC SOURCES, INTEGRATED AS MONOLITHIC ELEMENTS ON SILICON VLSI CHIPS, OFFER IMPORTANT ADVANTAGES IN THE TRANSMISSION OF INFORMATION WITHIN THE CHIP OR BETWEEN CHIPS IN ADVANCED COMPUTER SYSTEMS. THE SPEED OF OPTICAL-INTEGRATED VLSI DEVICES IS EXPECTED TO BE CONSIDERABLY HIGHER THAN EQUIVALENT VLSI WITH METALLIC INTERCONNECTS, DUE TO ABSENCE OF THE RC DELAY INHERENT IN THE METALLIC CONDU ...

    SBIR Phase II 1987 Department of DefenseDefense Advanced Research Projects Agency
  9. NOVEL MATERIALS FOR HIGH CURRENT SWITCH APPLICATIONS

    SBC: Technology Holding, LLC            Topic: N/A

    IF A SERIES OF MATERIALS CAN BE ENGINEERED HAVING METAL TO INSULATOR OR METAL-TO-SEMICONDUCTOR TRANSITION AT A SPECIFIC DESIRED TEMPERATURE, THEN THESE MATERIALS WILL PAVE THE WAY FOR A VARIETY OF APPLICATIONS. ONE SUCH APPLICATION IS A HIGH CURRENT, SOLID STATE, RELIABLE SWITCH. IT IS PROPOSED TO DEVELOP SUCH MATERIALS USING TIO2-VO2 SOLID SOLUTION. THE HIGH TEMPERATURE RUTILE STRUCTURE OF VO2 IS ...

    SBIR Phase I 1987 Department of DefenseDefense Advanced Research Projects Agency
  10. MONOLITHIC GAAS LIGHT-EMITTING DIODES ON SILICON VLSI CIRCUITS ELEMENTS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1986 Department of DefenseDefense Advanced Research Projects Agency
US Flag An Official Website of the United States Government