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Award Data
The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Radiation Hard Detector Array for Visible Light, Gamma Rays and
SBC: TPL, Inc. Topic: N/ANEW TECHNOLOGIES ARE REQUIRED FOR THE DETECTION AND IMAGING OF VISIBLE LIGHT, GAMMA RAYS AND NEUTRONS IN HIGH RADIATION ENVIRONMENTS SUCH AS THOSE ENCOUNTERED IN SPACE. CURRENTLY AVAILABLE, CRYSTALLINE SILICON DETECTOR ARRAYS SUCH AS CHARGE COUPLED DEVICES (CCD) ARE EXTREMELY SUSCEPTIBLE TO RADIATION DAMAGE AND A FEW KILORADS OF HIGH ENERGY PROTONS CAN SERIOUSLY DEGRADE PERFORMANCE IN A MATTER OF ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Development of Safe, Effective Difluoramination Reagents
SBC: TPL, Inc. Topic: N/ARocket motors that develop greater thrust with lower weight and volume require-ments are an ever present goal of the BMDO. One method of providing this is through formulation of higher energy propellant mixtures. TPL proposes to develop a new method of effectively producing new high perfor-mance propellant constituents for launch, orbit-orbit transfer and station keeping propulsion systems. The p ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Ultra-high Dielectric Constant Dielectric Materials
SBC: TPL, Inc. Topic: N/AN/A
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Inorganic Confromal Coatings for SIC Packaging
SBC: TPL, Inc. Topic: N/AN/A
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
SiC Dielectric Capacitor
SBC: UES INC Topic: N/ATHE PROPOSED RESEARCH ATTEMPTS TO DEVELOP AN ADVANCED CAPACITOR USING SiC FOR HIGH TEMPERATURE (400 0C), HIGH POWER, AND HIGH DENSITY ELECTRONIC COMPONENTS FOR AIRCRAFT OR AEROSPACE APPLICATION. THE CONVENTIONAL CAPACITOR CONSISTS OF A LARGE NUMBER OF METALLIZED POLYSULFONE FILM CAPACITORS IN PARALLEL ENCLOSED IN A HERMETICALLY SEALED METAL CASE. PROBLEMS WITH ELECTRICAL FAILURE THERMAL FAILURE AN ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Refractory Brazing Fillers with Low Vapor Pressure
SBC: UES INC Topic: N/ATHE PROPOSED RESEARCH ADDRESSES THE DEVELOPMENT OF SEVERAL DIFFERENT TYPES OF REFRACTORY BRAZING FILLERS AND EVALUATION OF THEIR PROPERTIES FOR HIGH TEMPERATURE AND LOW VAPOR PRESSURE APPLICATIONS. REFRACTORY METALS AND ALLOYS ARE OMNIPRESENT IN NUCLEAR SPACE REACTOR ASSEMBLIES. JOINING AND BONDING PARTS MADE OF SUCH MATERIALS WHILE STILL MAINTAINING THEIR EFFECTIVENESS IS A MAJOR CONCERN. FABRICA ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
WORK UNDERLOAD IN MODERN NPP CIBTRIK ROOMS
SBC: UES INC Topic: N/AN/A
SBIR Phase I 1993 Nuclear Regulatory Commission -
Object-Oriented Hierarchical Tool for Large-Scale Development
SBC: MZA ASSOCIATES CORP Topic: N/AWe propose to develop a novel and ambitious tool for large-scale development: a fourth-generation computer language (4GL) based upon an object-oriented generalization of the hierarchical block diagram paradigm, with powerful integrated simulation capabilities. Developers would assemble a prototype in a connect-the-blocks visual programming environment, test and evaluate it via simulation, then ite ...
SBIR Phase I 1995 Department of DefenseMissile Defense Agency -
Si Wires in Silicon-On-Insulator Configuration
SBC: GRATINGS INCORPORATED Topic: N/AWe propose a systematic investigation of crystalline Si structures as their dimensions are reduced to quantum sizes (5-10 nm). For convenience, we have chosen Si on insulator (SOI) material for optical and electrical characterization. Our nanofabrication approach relies on simple laser interferometric lithography techniques that are uniquely adaptable to large area manufacturing. Suitable applic ...
SBIR Phase I 1995 Department of DefenseMissile Defense Agency -
Sigec Heteroepitaxial Layer Growth By Low Temperature, High Purity
SBC: LAWRENCE SEMICONDUCTOR RESEARCH LABORATORY, INC. Topic: N/AN/A
SBIR Phase I 1993 Department of DefenseMissile Defense Agency