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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Multi-Spectral Sensors and Cameras for Test Applications

    SBC: TOWNSEND SCIENCE & ENGINEERING            Topic: N/A

    Silicon based charged couple devices (CCD) have been the workhorse of solid state imaging technology for use in the visible spectrum. Infrared systems are confined to exotic compound semiconductors that add an order of magnitude onto the cost. Solid stateultraviolet systems are still in their infancy. As the need for higher performance and need for hyperspectral response is ever increasing, these ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  2. Next Generation Imager

    SBC: TOWNSEND SCIENCE & ENGINEERING            Topic: N/A

    "Silicon based charged couple devices (CCD) have been the workhorse of solid state imaging technology for use in the visible spectrum. As the need for higher resolution is ever increasing, silicon based systems are being pushed to their limit. Either largersystems, constructed on a single wafer or higher pixel density per square centimeter are called for. In either case, all pixels in a frame must ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  3. Portable Optimizing Assembler for SIMD Instruction Sets

    SBC: VANU, INC.            Topic: N/A

    "This SBIR Phase I project will develop a compiler for a portablevector assembly language. This tool will allow portable low-levelprograms to be written for signal-processing applications, and willproduce efficient code for modern general-purpose processors (GPP),taking full advantage of their vector (SIMD) instruction sets such asSSE on the Intel Pentium and Altivec on the Motorola PowerPC. Thi ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  4. Ultra-lightweight Aerogel Superinsulation for SBL IFX

    SBC: ASPEN AEROGELS, INC.            Topic: N/A

    "A significant investment is made each year in the continued development of increasingly robust and sophisticated heating/cooling technologies for future utilization in a ballistic missile technology program or a major defense acquisition program. However,the effectiveness of thermal management systems is often directly related to the performance of insulation components utilized in their design. ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  5. A Heterointegrated InGaAs 40Gb Optoelectronic Cross Bar Receiver E- IR (> 0.9 microns)

    SBC: SOLID STATE SCIENTIFIC CORPORATION            Topic: N/A

    "Advances in EO sensors and fiber optic information distribution systems havesimplified the distribution of targeting information among the varioussystems. The requirements for higher levels of functionality and performanceare pushing the levels of integration to a point that can no longer besatisfied by the industry mainstay approach of hybrid assembly. Significantimprovements in fiber-optic syst ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  6. Optical Quantum Information Processing in Photonic Crystals

    SBC: Altair Center, Llc.            Topic: N/A

    "Quantum mechanics predicts that quantum two-level systems - quantum bits, or simply qubits - can provide fundamentally new methods of information processing due to possible existing in an arbitrary coherent superposition of quantum states. That offers anenormous gain in the use of information technology resources such as time and memory. The first qubits and quantum logic gates are now being buil ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  7. Neurophysiological Based Methods of Guided Image Search

    SBC: Veridical Research and Design Corporation            Topic: N/A

    "Complex analysis of intelligence imagery is crucial to the missions of intelligence organizations, yet remains constrained by labor-intensive, time-consuming visual search of large volumes of imagery. Many algorithms have been developed to automaticallyidentify regions of interest in large, complex sets of imagery, yet the utility of such algorithms is limited by the fact that human analysts dete ...

    SBIR Phase I 2002 Department of DefenseNational Geospatial-Intelligence Agency
  8. SOLID STATE OXYGEN COMPRESSOR FOR JOULE-THOMMPSON CRYOCOOLERS

    SBC: CERAMPHYSICS, INC.            Topic: N/A

    THE SIGNAL-TO-NOISE RATIO OF INFRARED DETECTORS INCREASES DRAMATICALLYAS THE TEMPERATURE OF THE DETECTOR IS REDUCED TO CRYOGENIC TEMPERATURES AND THERE HAS BEEN A SUBSTANTIAL IMPROVEMENT IN CRYOCOOLERS TO MEET THIS NEED. HOWEVER, VALVES OF ONE TYPE OF CRYOCOOLER, THE JOULE-THOMPSON EXPANSION CRYOCOOLER, ARE PRONE TO PLUGGING BY THE FREEZING OF IMPURITIES IN THE HIGH-PRESSURE STREAM. TO ADDRESS THI ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  9. SURFACE MORPHOLOGY OF SILICON ON INSULATOR FILMS PREPARED BY ZONE-MELTING RECRYSTALLIZATION

    SBC: Kopin Corporation            Topic: N/A

    RESEARCH IS DIRECTED AT TECHNIQUES TO IMPROVE SURFACE MORPHOLOGY IN SILICON ON INSULATOR (SOI) WAFERS PREPARED BY ZONE MELTING RECRYSTALLIZATION (ZMR). THE THREE AREAS OF PRIMARY IMPORTANCE IN IMPROVING THE SURFACE MORPHOLOGY OF ZMR PROCESSED WAFERS ARE: SLIP, BOW AND WARP, AND SURFACE SMOOTHNESS. SLIP IS CAUSED BY THERMALLY INDUCED STRESS THAT RESULTS FROM THE TEMPERATURE GRADIENT IN THE MELT ZON ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  10. DEPOSITION OR INP ON SI SUBSTRATES FOR MONOLITHIC INTEGRATION OF ADVANCED ELECTRONICS

    SBC: Spire Corporation            Topic: N/A

    A PROCESS IS BEING DEVELOPED FOR THE HETEROEPITAXIAL GROWTH OF INP ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION. DUE TO ITS ELECTRON SATURATED DRIFT VELOCITY AND RADIATION RESISTANCE, INP ISAN EXCELLENT MATERIAL FOR USE IN HIGH SPEED ELECTRON DEVICES AND SPACEAPPLICATIONS. SILICON IS AN OPTIMAL SUBSTRATE MATERIAL DUE TO THE AVAILABILITY OF HIGH PURITY, LARGE AREA, LOW COST WAFER ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
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