AlInN/GaN HFET over Free-Standing bulk GaN substrates

Award Information
Agency:
Department of Defense
Amount:
$99,963.00
Program:
STTR
Contract:
HQ0006-10-C-7402
Solitcitation Year:
2009
Solicitation Number:
2009.B
Branch:
Missile Defense Agency
Award Year:
2010
Phase:
Phase I
Agency Tracking Number:
B09B-001-0056
Solicitation Topic Code:
MDA09-T001
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
135907686
Principal Investigator
 Jinwei Yang
 Chief Scientist
 (803) 647-9757
 jinwei@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
 Rensselaer Polytechnic Institute
 Michael Shur
 110 8th Street
Troy, NY, 12180
 (518) 276-2201
 Nonprofit college or university
Abstract
SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial growth on native substrate and the use of AlInN/GaN lattice-matched structure will reduce the defects density by 2-3 orders of magnitude, resulting in RF devices with high reliability. Furthermore, it will lead to an increased electron concentration at the heterointerface, making the depletion extensions shorter and thus improving the cut-off frequency power trade off.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government