AlInN/GaN HFET over Free-Standing bulk GaN substrates

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,963.00
Award Year:
2010
Program:
STTR
Phase:
Phase I
Contract:
HQ0006-10-C-7402
Award Id:
94835
Agency Tracking Number:
B09B-001-0056
Solicitation Year:
n/a
Solicitation Topic Code:
MDA 09T001
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Jinwei Yang
Chief Scientist
(803) 647-9757
jinwei@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
Rensselaer Polytechnic Institute
Michael Shur
110 8th Street
Troy, NY, 12180
(518) 276-2201
Nonprofit college or university
Abstract
SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial growth on native substrate and the use of AlInN/GaN lattice-matched structure will reduce the defects density by 2-3 orders of magnitude, resulting in RF devices with high reliability. Furthermore, it will lead to an increased electron concentration at the heterointerface, making the depletion extensions shorter and thus improving the cut-off frequency power trade off.

* information listed above is at the time of submission.

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