AlInN/GaN heterostructures for X-band RF power amplification

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$749,823.00
Award Year:
2010
Program:
SBIR
Phase:
Phase II
Contract:
W9113M-10-C-0077
Award Id:
91554
Agency Tracking Number:
B083-024-0520
Solicitation Year:
n/a
Solicitation Topic Code:
MDA 08-024
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Jinwei Yang
Chief Scientist
(803) 647-9757
jinwei@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institute:
n/a
Abstract
SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. In Phase I, we successfully demonstrated MEMOCVDr growth of AlInN/GaN structures with Ga-free AlInN, the record sheet electron concentration and the record-breaking HFETs with peak drain currents exceeding 2 A/mm and ft and fmax above 100 GHz. Phase II program will focus on the optimization and scaleup of the growth technology. We will also demonstrate MOSHFET with current density higher than 2.5A/mm and cutoff frequency over 150GHz.

* information listed above is at the time of submission.

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