AlInN/GaN heterostructures for X-band RF power amplification

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-10-C-0077
Agency Tracking Number: B083-024-0520
Amount: $749,823.00
Phase: Phase II
Program: SBIR
Awards Year: 2010
Solitcitation Year: 2008
Solitcitation Topic Code: MDA08-024
Solitcitation Number: 2008.3
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road, Columbia, SC, 29209
Duns: 135907686
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jinwei Yang
 Chief Scientist
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Research Institution
SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. In Phase I, we successfully demonstrated MEMOCVD® growth of AlInN/GaN structures with Ga-free AlInN, the record sheet electron concentration and the record-breaking HFETs with peak drain currents exceeding 2 A/mm and ft and fmax above 100 GHz. Phase II program will focus on the optimization and scaleup of the growth technology. We will also demonstrate MOSHFET with current density higher than 2.5A/mm and cutoff frequency over 150GHz.

* information listed above is at the time of submission.

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