High-Temperature Low-Loss III-Nitride MOSHFET RF Limiter

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$69,199.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
N65538-10-M-0090
Award Id:
98240
Agency Tracking Number:
N093-200-0758
Solicitation Year:
n/a
Solicitation Topic Code:
NAVY 09-200
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Xuhong Hu
Research Scientist
(803) 647-9757
hu@s-et.com
Business Contact:
REmis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institute:
n/a
Abstract
We propose to develop a compact solid-state RF power limiter using III-Nitride technology fully compatible with that of other III-Nitride RF components (power amplifiers, RF switches etc.) The proposed limiter is based on the SET Inc. proprietary insulated gate device (MOSHFET) design and technology. Using recent achievements in the epilayer growth, contact formation and active region design, the proposed limiter will achieve a very low insertion loss (0.1- 1dB, depending on the required protection power), low noise, high maximum operating temperatures, between 300oC and 600oC or even higher, and high protection and maximum (breakdown limited) powers, well exceeding +60 dBm. The proposed technology is also capable to providing limiters with low protection powers, in the range of 15 to 30 dBm.

* information listed above is at the time of submission.

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