High-Temperature Low-Loss III-Nitride MOSHFET RF Limiter

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N65538-10-M-0090
Agency Tracking Number: N093-200-0758
Amount: $69,199.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solicitation Year: 2009
Solicitation Topic Code: N093-200
Solicitation Number: 2009.3
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Xuhong Hu
 Research Scientist
 (803) 647-9757
 hu@s-et.com
Business Contact
 REmis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We propose to develop a compact solid-state RF power limiter using III-Nitride technology fully compatible with that of other III-Nitride RF components (power amplifiers, RF switches etc.) The proposed limiter is based on the SET Inc. proprietary insulated gate device (MOSHFET) design and technology. Using recent achievements in the epilayer growth, contact formation and active region design, the proposed limiter will achieve a very low insertion loss (0.1- 1dB, depending on the required protection power), low noise, high maximum operating temperatures, between 300oC and 600oC or even higher, and high protection and maximum (breakdown limited) powers, well exceeding +60 dBm. The proposed technology is also capable to providing limiters with low protection powers, in the range of 15 to 30 dBm.

* Information listed above is at the time of submission. *

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