SOI MESFETs for Ultra-Low Power Electronic Circuits

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-10-C-0020
Agency Tracking Number: 07ST1-0083
Amount: $730,629.00
Phase: Phase II
Program: STTR
Awards Year: 2010
Solicitation Year: 2007
Solicitation Topic Code: ST071-007
Solicitation Number: 2007.A
Small Business Information
DUNS: 185307266
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Seth Wilk
 Chief Technology Officer
 (602) 703-3730
Business Contact
 Pamela DiSalvo
Title: Business Manager
Phone: (480) 816-8077
Research Institution
 Arizona State University
 Dudley Sharp
 Sponsored Projects Admin.
PO Box 873503
Tempe, AZ, 85287-
 (480) 965-0273
 Nonprofit college or university
Voltage compliant metal-semiconductor field-effect-transistors (MESFETs) provide solutions to critical problems arising from the reduced operating voltage of highly scaled CMOS. This Phase 2 activity will develop MESFET based circuitries that allow high voltage applications to coexist on future, highly scaled low voltage CMOS applications. Our patented MESFET technology will be used to develop both RF and DC applications with a focus on RF power conversion, DC power management and driver applications. Our first objective is to develop high efficiency power amplifiers (PAs) for ultra-low power RF transceivers. As the supply voltage is reduced, resistive losses in the power amplifier limit its overall RF power conversion efficiency. Phase 2 will demonstrate a fully integrated PA module for system-on-a-chip transceiver applications that take advantage of the MESFETs high voltage capability to eliminate these problems. The second objective is to demonstrate low dropout (LDO) linear regulators for RF transceivers. The MESFET LDOs will have greater load stability, smaller silicon area and faster settling time compared to existing p-channel CMOS designs. We shall partner with Honeywell and Jazz Semiconductor during Phase 2 to demonstrate the MESFET circuits using advanced SOI CMOS technologies. These collaborations will be further developed for Phase 3 Commercialization activities.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government