SOI MESFETs for Ultra-Low Power Electronic Circuits

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$730,629.00
Award Year:
2010
Program:
STTR
Phase:
Phase II
Contract:
W31P4Q-10-C-0020
Agency Tracking Number:
07ST1-0083
Solicitation Year:
2007
Solicitation Topic Code:
ST071-007
Solicitation Number:
2007.A
Small Business Information
SJT MICROPOWER INC
16411 N SKYRIDGE LN, FOUNTAIN HILLS, AZ, 85268-
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
185307266
Principal Investigator:
Seth Wilk
Chief Technology Officer
(602) 703-3730
s.wilk@sjtmicropower.com
Business Contact:
Pamela DiSalvo
Business Manager
(480) 816-8077
p.disalvo@sjtmicropower.com
Research Institution:
Arizona State University
Dudley Sharp
Sponsored Projects Admin.
PO Box 873503
Tempe, AZ, 85287-
(480) 965-0273
Nonprofit college or university
Abstract
Voltage compliant metal-semiconductor field-effect-transistors (MESFETs) provide solutions to critical problems arising from the reduced operating voltage of highly scaled CMOS. This Phase 2 activity will develop MESFET based circuitries that allow high voltage applications to coexist on future, highly scaled low voltage CMOS applications. Our patented MESFET technology will be used to develop both RF and DC applications with a focus on RF power conversion, DC power management and driver applications. Our first objective is to develop high efficiency power amplifiers (PAs) for ultra-low power RF transceivers. As the supply voltage is reduced, resistive losses in the power amplifier limit its overall RF power conversion efficiency. Phase 2 will demonstrate a fully integrated PA module for system-on-a-chip transceiver applications that take advantage of the MESFETs high voltage capability to eliminate these problems. The second objective is to demonstrate low dropout (LDO) linear regulators for RF transceivers. The MESFET LDOs will have greater load stability, smaller silicon area and faster settling time compared to existing p-channel CMOS designs. We shall partner with Honeywell and Jazz Semiconductor during Phase 2 to demonstrate the MESFET circuits using advanced SOI CMOS technologies. These collaborations will be further developed for Phase 3 Commercialization activities.

* information listed above is at the time of submission.

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