BANDGAP TECHNOLOGIES, INC.

Basic Information

1428 Taylor St.
Columbia, SC, 29201

Company Profile

n/a

Additional Details

Field Value
DUNS: 138039834
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 4


  1. Silicon Carbide Bulk Crystal Growth at High Growth Rates

    Amount: $994,443.00

    The development of a process to produce low defect density silicon carbide (SiC) boules at high growth rates will significantly reduce the cost of wafers and thus accelerate the rapid commercializatio ...

    SBIR Phase II 2005 Missile Defense Agency Department of Defense
  2. Off c-Axis Bulk Crystal Growth of Silicon Carbide

    Amount: $999,998.00

    The development of a process to produce bulk silicon carbide (SiC) boules with alternate crystallographic orientations, specifically the a-orientation, which is perpendicular to the normally-grown c-o ...

    SBIR Phase II 2003 Missile Defense Agency Department of Defense
  3. Growth of Large Diameter Silicon Carbide Boules

    Amount: $750,000.00

    Absence of low defect density large diameter (~100 mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC-based devices. Hence, the development of a process to produ ...

    SBIR Phase II 2003 Missile Defense Agency Department of Defense
  4. Development of an Isotropic Etching Method of Surface Preparation of SiC

    Amount: $70,000.00

    "This Phase I SBIR program is aimed at demonstrating the principle of an approach for the surface preparation of SiC wafers comparable or superior to chemo-mechanical polishing. In the Phase I progra ...

    SBIR Phase I 2002 Missile Defense Agency Department of Defense
  5. An Approach for the Growth of Long Silicon Carbide Boules

    Amount: $70,000.00

    "This Phase I program is aimed at demonstrating the principle of an approach for the growth of 4H-SiC boules 50 mm in diameter but of length equal to 50 mm, which is approximately twice the length of ...

    SBIR Phase I 2002 Missile Defense Agency Department of Defense
  6. A Novel Approach for the Growth of Semi-Insulating Silicon Carbide

    Amount: $700,000.00

    The development of a process to produce semi-insulating (SI) silicon carbide (SiC) boules with improved yields will significantly reduce the cost of wafers and thus accelerate the rapid commercializat ...

    SBIR Phase II 2001 Missile Defense Agency Department of Defense
  7. Growth of Large Diameter Silicon Carbide Boules

    Amount: $65,000.00

    Absence of low defect density large diameter (~100mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC based devices. This phase I program is aimed at demonstratin ...

    SBIR Phase I 2001 Missile Defense Agency Department of Defense
  8. Off c-Axis Bulk Crystal Growth of Silicon Carbide

    Amount: $65,002.00

    This Phase I program is aimed at demonstrating the principle of off c-axis boule growth of 4H-SiC. In Phase I, using off-axis SiC seeds, we will demonstrate the growth of 4H-n SiC boules~15 mm long. ...

    SBIR Phase I 2001 Missile Defense Agency Department of Defense
  9. A New Approach for the Growth of High Resistivity Silicon Carbide

    Amount: $65,000.00

    This Phase I program is aimed at demonstrating a novel SiC source material synthesis technique that will be used to grow high resistivity SiC. In this effort, we will demonstrate that the proposed so ...

    SBIR Phase I 2001 Missile Defense Agency Department of Defense
  10. N/A

    Amount: $65,000.00

    N/A

    SBIR Phase I 2000 Missile Defense Agency Department of Defense

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