BANDGAP TECHNOLOGIES, INC.

Company Information

Company Name
BANDGAP TECHNOLOGIES, INC.
Address
1428 Taylor St.
Columbia, SC, 29201
Phone
1 803-765-9321
URL
n/a
DUNS
138039834
Number of Employees
4

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$465,002.00
7
SBIR Phase II
$3,444,441.00
4
Chart code to be here

Award List

  1. A Novel Approach for the Growth of Semi-Insulating Silicon Carbide

    Amount: $700,000.00

    The development of a process to produce semi-insulating (SI) silicon carbide (SiC) boules with improved yields will significantly reduce the cost of wafers and thus accelerate the rapid commercializat ...

    SBIR Phase II 2001 Missile Defense AgencyDepartment of Defense
  2. N/A

    Amount: $65,000.00

    N/A

    SBIR Phase I 2000 Missile Defense AgencyDepartment of Defense
  3. Silicon Carbide Bulk Crystal Growth at High Growth Rates

    Amount: $994,443.00

    The development of a process to produce low defect density silicon carbide (SiC) boules at high growth rates will significantly reduce the cost of wafers and thus accelerate the rapid commercializatio ...

    SBIR Phase II 2005 Missile Defense AgencyDepartment of Defense
  4. N/A

    Amount: $65,000.00

    N/A

    SBIR Phase I 2000 Missile Defense AgencyDepartment of Defense
  5. Off c-Axis Bulk Crystal Growth of Silicon Carbide

    Amount: $999,998.00

    The development of a process to produce bulk silicon carbide (SiC) boules with alternate crystallographic orientations, specifically the a-orientation, which is perpendicular to the normally-grown c-o ...

    SBIR Phase II 2003 Missile Defense AgencyDepartment of Defense
  6. Growth of Large Diameter Silicon Carbide Boules

    Amount: $65,000.00

    Absence of low defect density large diameter (~100mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC based devices. This phase I program is aimed at demonstratin ...

    SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense
  7. Off c-Axis Bulk Crystal Growth of Silicon Carbide

    Amount: $65,002.00

    This Phase I program is aimed at demonstrating the principle of off c-axis boule growth of 4H-SiC. In Phase I, using off-axis SiC seeds, we will demonstrate the growth of 4H-n SiC boules~15 mm long. ...

    SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense
  8. A New Approach for the Growth of High Resistivity Silicon Carbide

    Amount: $65,000.00

    This Phase I program is aimed at demonstrating a novel SiC source material synthesis technique that will be used to grow high resistivity SiC. In this effort, we will demonstrate that the proposed so ...

    SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense
  9. Growth of Large Diameter Silicon Carbide Boules

    Amount: $750,000.00

    Absence of low defect density large diameter (~100 mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC-based devices. Hence, the development of a process to produ ...

    SBIR Phase II 2003 Missile Defense AgencyDepartment of Defense
  10. Development of an Isotropic Etching Method of Surface Preparation of SiC

    Amount: $70,000.00

    "This Phase I SBIR program is aimed at demonstrating the principle of an approach for the surface preparation of SiC wafers comparable or superior to chemo-mechanical polishing. In the Phase I progra ...

    SBIR Phase I 2002 Missile Defense AgencyDepartment of Defense

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