A Novel Approach for the Growth of Semi-Insulating Silicon Carbide

Award Information
Agency:
Department of Defense
Amount:
$700,000.00
Program:
SBIR
Contract:
N00014-01-C-0189
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2001
Phase:
Phase II
Agency Tracking Number:
00-0695
Solicitation Topic Code:
N/A
Small Business Information
BANDGAP TECHNOLOGIES, INC.
800 N. Lucas St. #U7, West Columbia, SC, 29169
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
138039834
Principal Investigator
 Yuri Khlebnikov
 President
 (803) 794-3125
 khlebnikov@bandgap.com
Business Contact
 Mat Parker
Title: Vice President
Phone: (803) 463-0446
Email: matparker@bandgap.com
Research Institution
N/A
Abstract
The development of a process to produce semi-insulating (SI) silicon carbide (SiC) boules with improved yields will significantly reduce the cost of wafers and thus accelerate the rapid commercialization of SI SiC for microwave and RF system applications.The objective of this Phase II project is to improve and perfect the process development of a radically new approach for the synthesis of high purity SiC source material that can solve many of the problems inherent to the boule growth of SI SiC using theconventional compensation method. In Phase I, the feasibility of a novel SiC source synthesis method and its applicability for the growth of high resistivity SiC (background doping concentration of <10^4 per cc) boules was demonstrated. In Phase II, thesource material synthesis process will be optimized for cost effectiveness, yield, and purity - especially a reduction in metallic impurities. In Phase II, the synthesized high purity source material will be used to demonstrate the growth of SI SiCboules, 50mm in diameter. With the proposed approach, three specific advantages are anticipated: (a) the high yield of the synthesis process is expected to result in low cost of the pure source material, (b) the high purity source material will produceboules whose characteristics are more uniform over their volume, (c) higher wafer yield and reduced cost of SI SiC wafers, which stimulates the widespread commercialization of the material for microwave and RF system applications.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government