Growth of Large Diameter Silicon Carbide Boules

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$65,000.00
Award Year:
2001
Program:
SBIR
Phase:
Phase I
Contract:
N00014-01-M-0141
Agency Tracking Number:
01-0223
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
BANDGAP TECHNOLOGIES, INC.
1428 Taylor St., Columbia, SC, 29201
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
138039834
Principal Investigator
 Yuri Khlebnikov
 President
 (803) 765-9321
 khlebnikov@bandgap.com
Business Contact
 Mat Parker
Title: Vice President
Phone: (803) 765-9321
Email: matparker@bandgap.com
Research Institution
N/A
Abstract
Absence of low defect density large diameter (~100mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC based devices. This phase I program is aimed at demonstrating a novel technique that will significantly reduce themechanical stress in SiC during boule growth. In phase I, we will demonstrate that by the proposed method, a significant reduction in the mechnical stress is achieved in the growth of a 75 mm diameter 4H-SiC boule. Also, in Phase I, we will slice theboule into wafers, lap and polish the wafers, and provide comparison of mechanical stress between wafers produced by the proposed and conventional approaches. In Phase II, the technique will be refined to demonstrate the production of commercially viable4H-n SiC boules, 100 mm in diameter, with a significant reduction in mechanical stress compared to those achieved by the conventional method.With the proposed approach, three specific advantages are anticipated: (a) substantial improvement in the qualityof commercially available wafers due to a significant reduction in the density of defects, (b) improvement in the yield of good quality wafers, and (c) reduction in the cost of good quality wafers, which will stimulate the widespread commercialization ofSiC devices for power conditioning and switching and for RF and microwave applications.

* information listed above is at the time of submission.

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