BarSiC Semiconductors, LLC


209 Brook Ave
Starkville, MS, 39759 4359


DUNS: 199474573
# of Employees: 2

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: Y

Award Charts

Award Listing

  1. SBIR Phase I: Ion implantation-free SiC device fabrication technology based on low-temperature selective epitaxial growth

    Amount: $99,996.00

    This Small Business Innovative Research Phase I project aims at developing new semiconductor device processing technology for SiC electronics. The new method is based on low-temperature selective epi ...

    SBIRPhase I2009National Science Foundation
  2. STTR Phase I: Growth of 3C-SiC Substrates using High-Temperature Chemical Vapor Deposition

    Amount: $99,956.00

    This Small Business Technology Transfer (STTR) Phase I project aims at developing new material growth technology for manufacturing semiconductor substrates of cubic 3C-SiC polytype for high-power, hig ...

    STTRPhase I2006National Science Foundation

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