BarSiC Semiconductors, LLC

Basic Information

209 Brook Ave
Starkville, MS, 39759 4359

Company Profile


Additional Details

Field Value
DUNS: 199474573
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: Y
Number of Employees: 2

  1. SBIR Phase I: Ion implantation-free SiC device fabrication technology based on low-temperature selective epitaxial growth

    Amount: $99,996.00

    This Small Business Innovative Research Phase I project aims at developing new semiconductor device processing technology for SiC electronics. The new method is based on low-temperature selective epi ...

    SBIR Phase I 2009 National Science Foundation
  2. STTR Phase I: Growth of 3C-SiC Substrates using High-Temperature Chemical Vapor Deposition

    Amount: $99,956.00

    This Small Business Technology Transfer (STTR) Phase I project aims at developing new material growth technology for manufacturing semiconductor substrates of cubic 3C-SiC polytype for high-power, hig ...

    STTR Phase I 2006 National Science Foundation

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