SBIR Phase I: Ion implantation-free SiC device fabrication technology based on low-temperature selective epitaxial growth

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$99,996.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
0839748
Award Id:
90972
Agency Tracking Number:
0839748
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
209 Brook Ave, Starkville, MS, 39759
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
199474573
Principal Investigator:
Galyna Melnychuk
MS
(662) 323-9854
galyna@barsicsemi.com
Business Contact:
Galyna Melnychuk
MS
(662) 323-9854
galyna@barsicsemi.com
Research Institution:
n/a
Abstract
This Small Business Innovative Research Phase I project aims at developing new semiconductor device processing technology for SiC electronics. The new method is based on low-temperature selective epitaxial growth of SiC (LTSEG) of SiC. The technology promises high values of doping, especially for p-type doping that is problematic in SiC. Another advantage is the development of a self-aligned fabrication technique for the emerging market of SiC power integrated circuits. Self-aligned device fabrication for SiC is in the embryonic stage. Efforts to develop new fabrication technologies in Japan and Europe are growing, which may put the U.S. SiC industry significantly behind in developing cost-efficient SiC electronics. In this respect, the novel device fabrication method offers a possibility of strong competitive advantage.

* information listed above is at the time of submission.

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