SBIR Phase I: Ion implantation-free SiC device fabrication technology based on low-temperature selective epitaxial growth

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0839748
Agency Tracking Number: 0839748
Amount: $99,996.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: N/A
Solicitation Topic Code: EL
Solicitation Number: NSF 08-548
Small Business Information
209 Brook Ave, Starkville, MS, 39759
DUNS: 199474573
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 Galyna Melnychuk
 (662) 323-9854
Business Contact
 Galyna Melnychuk
Title: MS
Phone: (662) 323-9854
Research Institution
This Small Business Innovative Research Phase I project aims at developing new semiconductor device processing technology for SiC electronics. The new method is based on low-temperature selective epitaxial growth of SiC (LTSEG) of SiC. The technology promises high values of doping, especially for p-type doping that is problematic in SiC. Another advantage is the development of a self-aligned fabrication technique for the emerging market of SiC power integrated circuits. Self-aligned device fabrication for SiC is in the embryonic stage. Efforts to develop new fabrication technologies in Japan and Europe are growing, which may put the U.S. SiC industry significantly behind in developing cost-efficient SiC electronics. In this respect, the novel device fabrication method offers a possibility of strong competitive advantage.

* Information listed above is at the time of submission. *

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