Belford Research, Inc.

Basic Information

386 Spanish Wells Road
Hilton Head Island, SC, 29926

Company Profile

n/a

Additional Details

Field Value
DUNS: n/a
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: Y
Number of Employees: 5


  1. SBIR Phase II: Ge-Free Strained Silicon Via dTCE Bonding (Differential Thermal Coefficient of Expansion Bonding)

    Amount: $499,997.00

    This Small Business Innovative Research Phase II project will develop a process that integrates wafer bonding technology with a novel straining process to create a new ultra fast silicon substrate: St ...

    SBIR Phase II 2004 National Science Foundation
  2. Gallium Nitride (GaN) Device Technology Enhancements Leading to Advanced Transmit/Receive (T/R) Modules for Radar Performance Enhancement

    Amount: $69,998.00

    We propose to increase the mobility of both n- and p-type GaN by applying tensile strain and fixing the strain by bonding to an appropriate heat sink material. Straining in other semiconductor materia ...

    SBIR Phase I 2003 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  3. SBIR Phase I: Ge-Free Strained Silicon Via dTCE Bonding (Differential Thermal Coefficient of Expansion Bonding)

    Amount: $99,880.00

    This Small Business Innovation Research (SBIR) Phase I propose to combine the technologies of silicon-on-insulator (SOI) manufacture with strain-inducing wafer bonding to produce Strained-Si On Insula ...

    SBIR Phase I 2003 National Science Foundation
  4. Strain-Enhanced Tunnel Diode Technology

    Amount: $69,645.00

    "We intend to increase by an order of magnitude, the current density of silicon-based tunnel diodes. This increase directly relates to a corresponding increase in performance (speed). Apart from being ...

    SBIR Phase I 2002 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  5. Germanium-Free Strained-SOI Wafers

    Amount: $69,999.00

    "We propose to combine the technologies of SOI manufacture with strain-inducing wafer bonding to produce Strained-Si On Insulator (SSOI) wafers. Optimizing this new Strained-Silicon-on-Insulator will ...

    SBIR Phase I 2002 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  6. NEXT-AGAIN-GENERATION RADIATION HARD CMOS

    Amount: $794,332.00

    We proposed a simple wafer scale method to leap frog current CMOS technology. The slow-down in CMOS scaling is limited by technology difficulties and by economics. In tooling up for .13-micron techn ...

    SBIR Phase II 2001 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  7. N/A

    Amount: $65,000.00

    N/A

    SBIR Phase I 2000 Missile Defense AgencyDepartment of DefenseDepartment of Defense

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