Belford Research, Inc.

Company Information
Address 386 Spanish Wells Road
Hilton Head Island, SC, 29926


Information

DUNS:

# of Employees: 5


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: Y



Award Charts




Award Listing

  1. SBIR Phase II: Ge-Free Strained Silicon Via dTCE Bonding (Differential Thermal Coefficient of Expansion Bonding)

    Amount: $499,997.00

    This Small Business Innovative Research Phase II project will develop a process that integrates wafer bonding technology with a novel straining process to create a new ultra fast silicon substrate: St ...

    SBIRPhase II2004National Science Foundation
  2. Gallium Nitride (GaN) Device Technology Enhancements Leading to Advanced Transmit/Receive (T/R) Modules for Radar Performance Enhancement

    Amount: $69,998.00

    We propose to increase the mobility of both n- and p-type GaN by applying tensile strain and fixing the strain by bonding to an appropriate heat sink material. Straining in other semiconductor materia ...

    SBIRPhase I2003Missile Defense Agency Department of Defense
  3. SBIR Phase I: Ge-Free Strained Silicon Via dTCE Bonding (Differential Thermal Coefficient of Expansion Bonding)

    Amount: $99,880.00

    This Small Business Innovation Research (SBIR) Phase I propose to combine the technologies of silicon-on-insulator (SOI) manufacture with strain-inducing wafer bonding to produce Strained-Si On Insula ...

    SBIRPhase I2003National Science Foundation
  4. Strain-Enhanced Tunnel Diode Technology

    Amount: $69,645.00

    "We intend to increase by an order of magnitude, the current density of silicon-based tunnel diodes. This increase directly relates to a corresponding increase in performance (speed). Apart from being ...

    SBIRPhase I2002Missile Defense Agency Department of Defense
  5. Germanium-Free Strained-SOI Wafers

    Amount: $69,999.00

    "We propose to combine the technologies of SOI manufacture with strain-inducing wafer bonding to produce Strained-Si On Insulator (SSOI) wafers. Optimizing this new Strained-Silicon-on-Insulator will ...

    SBIRPhase I2002Missile Defense Agency Department of Defense
  6. NEXT-AGAIN-GENERATION RADIATION HARD CMOS

    Amount: $794,332.00

    We proposed a simple wafer scale method to leap frog current CMOS technology. The slow-down in CMOS scaling is limited by technology difficulties and by economics. In tooling up for .13-micron techn ...

    SBIRPhase II2001Missile Defense Agency Department of Defense
  7. N/A

    Amount: $65,000.00

    N/A

    SBIRPhase I2000Missile Defense Agency Department of Defense

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