Gallium Nitride (GaN) Device Technology Enhancements Leading to Advanced Transmit/Receive (T/R) Modules for Radar Performance Enhancement

Award Information
Agency:
Department of Defense
Amount:
$69,998.00
Program:
SBIR
Contract:
HQ00603C0071
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2003
Phase:
Phase I
Agency Tracking Number:
031-0239
Solicitation Topic Code:
N/A
Small Business Information
BELFORD RESEARCH, INC.
386 Spannish Wells Road, Building B, Suite 3, Hilton Head Island, SC, 29926
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Rona Belford
 President
 (843) 681-7688
 belford@hargray.com
Business Contact
 Rona Belford
Title: President
Phone: (843) 681-7688
Email: belford@hargray.com
Research Institution
N/A
Abstract
We propose to increase the mobility of both n- and p-type GaN by applying tensile strain and fixing the strain by bonding to an appropriate heat sink material. Straining in other semiconductor materials is now recognized as a viable route to higherperformance. We have demonstrated in these systems how low-level strain (0.05%) can increase mobility by a factor of two. Increases were larger for p-type material than for n-type. In GaN systems p-type mobility is poor due to reduced material qualityarising from requisite large doping densities. Enhanced mobility would offset the need for such high doping and give an even greater benefit than that of the strain enhancement alone. The piezoelectric polarization within these systems indicates they wouldbe prime candidates for low-level-uniaxial strain enhancement. A conservative estimate of increased electronic performance using our technology is a factor of 4. This translates directly to circuit/system speed.This will be facilitated in part by the alleviation of the major weakness in GaN systems, i.e. that of poor quality p-type GaN. Our technology could facilitate p-type performance required for bipolar devices as well as complimentary circuits.

* information listed above is at the time of submission.

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