SBIR Phase I: Ge-Free Strained Silicon Via dTCE Bonding (Differential Thermal Coefficient of Expansion Bonding)

Award Information
Agency:
National Science Foundation
Amount:
$99,880.00
Program:
SBIR
Contract:
0314300
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
N/A
Award Year:
2003
Phase:
Phase I
Agency Tracking Number:
0314300
Solicitation Topic Code:
N/A
Small Business Information
Belford Research, Inc.
386 Spanish Wells Road, Hilton Head Island, SC, 29926
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Rona Belford
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract
This Small Business Innovation Research (SBIR) Phase I propose to combine the technologies of silicon-on-insulator (SOI) manufacture with strain-inducing wafer bonding to produce Strained-Si On Insulator (SSOI) wafers. Silicon-based devices with silicon/germanium (Si/Ge) heterostructures have been extensively researched and this has lead to the discovery that tensile strained silicon exhibits superior electronic properties. Bi axially strained-silicon devices are currently strained via expensive which is a highly technical heterostructure fabrication process. Tensile strain can be introduced by growing silicon pseudomorphically on to a lattice of larger unit cell, usually an alloy of Ge/Si. In this work, it is hoped that by optimizing Strained-Silicon-on-Insulator will increase carrier mobilities by more than 3 times The anticipated benefits of this technology would yield ultra-fast, mainstream silicon-based electronics, which would effectively be new host materials with speed, and performance would surpass Gallium Arsenate (GaAs). The multi-billion dollar chips industry would benefit would benefit by reducing the costs for a new plant to design technology.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government