SBIR Phase I: Ge-Free Strained Silicon Via dTCE Bonding (Differential Thermal Coefficient of Expansion Bonding)

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$99,880.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
0314300
Award Id:
63684
Agency Tracking Number:
0314300
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
386 Spanish Wells Road, Hilton Head Island, SC, 29926
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Rona Belford
() -
Business Contact:
() -
Research Institute:
n/a
Abstract
This Small Business Innovation Research (SBIR) Phase I propose to combine the technologies of silicon-on-insulator (SOI) manufacture with strain-inducing wafer bonding to produce Strained-Si On Insulator (SSOI) wafers. Silicon-based devices with silicon/germanium (Si/Ge) heterostructures have been extensively researched and this has lead to the discovery that tensile strained silicon exhibits superior electronic properties. Bi axially strained-silicon devices are currently strained via expensive which is a highly technical heterostructure fabrication process. Tensile strain can be introduced by growing silicon pseudomorphically on to a lattice of larger unit cell, usually an alloy of Ge/Si. In this work, it is hoped that by optimizing Strained-Silicon-on-Insulator will increase carrier mobilities by more than 3 times The anticipated benefits of this technology would yield ultra-fast, mainstream silicon-based electronics, which would effectively be new host materials with speed, and performance would surpass Gallium Arsenate (GaAs). The multi-billion dollar chips industry would benefit would benefit by reducing the costs for a new plant to design technology.

* information listed above is at the time of submission.

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