Organometallic Monomer Precursors and Intrafilm Annealing for a LiNbO3 Crystal Film Production

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 18145
Amount: $600,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1133 East 35th Street, Brooklyn, NY, 11210
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 John Carter, Phd
 (718) 338-3311
Business Contact
Phone: () -
Research Institution
A feasibility study of a new route to the formation of crystalline films of the ferroelectric LiNbO3 is proposed. Two aspects of the proposed route are unique in themselves and, combined, should permit the development of a low temperature, scalable production process, to make electronic grade LiNbO3 more widely available to the integrated circuit (IC) industry. Preparation and reaction of novel volatile or metallic alkoxide monomer precursors in CVD and sol-gel process experiments are described. Three approaches to highly localized, intrafilm annealing are also outlined. Each seeks to minimize heat transport to the silicon substrate during the annealing step required to form the crystalline LiNbO3 from a film deposited by a CVD or sol-gel process. These include rapid high-energy pulsed laser annealing, localized microwave annealing on a deposited sol-gel layer and a chemical exothermic reaction within the sol-gel derived film.

* Information listed above is at the time of submission. *

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