Ultra-thin AlN/GaN Heterostructures for Robust, Radiation-hard Electronics
Department of Energy
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Svt Associates, Inc.
7620 Executive Drive, Eden Prairie, MN, 55344
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AbstractExposure to high energy radiation can produces disruptive transient behavior as well as long-term changes in electronic device and circuit characteristics. Depending on both the material properties and radiation characteristics, these effects may result in parametric degradation or functional failure in electronic circuits. Future DOE nuclear research and high-energy physics projects, such as the ATLAS and CMS beam interaction regions in the Large Hadron Collider (LHC), require ultrahigh radiation hardness for both ionizing and displacing radiation in particle and photon detectors and the related electronics. Due to a number of important properties in III-nitride materials, including high thermal and chemical stability and a wide bandgap, we propose to develop rugged, radiation-hard AlN/GaN MOS-HEMTs for use in DOE applications. These novel devices have shown an order of magnitude higher tolerance to radiation compared to typical AlGaN/GaN HEMTs and about three orders of magnitude more radiation hardness compared to GaAs-based devices. Commercial Application and Other Benefits: Radiation-hard electronics are sought for robust operation of satellites, space probes, and for support electronics in high-energy and nuclear experiments. Robust high performance power amplifiers are essentials part of the enabling technology for future space missions as well as many civilian and military applications. Material properties of GaN and related alloys make them a key component for these applications
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