III-nitride 1.5 Micron Photonic Devices on Si Substrates

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$100,000.00
Award Year:
2010
Program:
STTR
Phase:
Phase I
Contract:
W911NF-10-C-0073
Agency Tracking Number:
A10A-015-0010
Solicitation Year:
2010
Solicitation Topic Code:
A10A-T015
Solicitation Number:
2010.A
Small Business Information
III-N Technology, Inc.
4627 5th Street, Lubbock, TX, 79416
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
017213773
Principal Investigator:
Jing Li
R & D Director
(806) 401-9289
jingli@3n-tech.com
Business Contact:
Jingyu Lin
Co-Founder
(806) 441-4570
jylin@3n-tech.com
Research Institution:
Texas Tech University
Kathleen Harris
Office of Research Services
203 Holden Hall
Lubbock, TX, 79409
(806) 742-3884
Nonprofit college or university
Abstract
Research in silicon photonics has received much attention in recent years for its potential to utilize well developed silicon processing technology. A broad range of linear and nonlinear silicon photonic devices such as modulators, splitters, switches and detectors have been demonstrated. However, the most important challenge in silicon photonics thus far is the difficulty of making electrically pumped light sources and amplifiers. The objective of this project is to develop new types of optical emitters and amplifiers on silicon. The proposed approach is to utilize epitaxial growth of III-nitride semiconductors on Si substrate with in-situ erbium (Er) doping by metal-organic chemical vapor deposition (MOCVD). The approach is based on successful synthesizing of III-nitride UV/visible photonic structures on Si and Er-doped III-nitride photonic structures, achieved jointly by III-N Technology, Inc and Texas Tech University. These photonic structures predominantly exhibited the desired optical emission for optical communication at 1.5 micron. The technical aims are to (a) Further develop MOCVD growth technology for obtaining device quality InGaN on Si; (b) Optimize in-situ Er incorporation into III-nitride device structures; (c) Develop device fabrication technology for the realization of Er-doped nitride optical amplifiers and emitters active at 1.5 micron.

* information listed above is at the time of submission.

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