Design Modified Commercial CMOS for MDA IR FPAs

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$99,912.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-09-C-0079
Agency Tracking Number:
B083-013-0482
Solicitation Year:
2008
Solicitation Topic Code:
MDA08-013
Solicitation Number:
2008.3
Small Business Information
Black Forest Engineering, LLC
12930 Morris Trail, Colorado Springs, CO, 80908
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
621633296
Principal Investigator
 Stephen Gaalema
 President
 (719) 593-9501
 sgaalema@bfe.com
Business Contact
 Vivian McDonald
Title: Office Manager
Phone: (719) 593-9501
Email: vmcdonald@bfe.com
Research Institution
N/A
Abstract
Missile Defense Agency (MDA) requires high performance, high sensitivity and low noise infrared sensors for space based sensing applications that operate in environments where radiation hardness is essential to mission operation. Radiation hard by design (RHBD) readout integrated circuits (ROICs) decrease the overall cost of focal plane arrays (FPAs) by exploiting existing commercial foundries rather than relying on increasingly scarce and costly “proven” foundries that offer radiation hard by process (RHBP). Commercial CMOS fabricated with thick silicon-on-insulator (SOI) wafers will provide exceptional radiation performance to total dose (> 300kRads (Si) with both ionizing and nuclear particles) and mitigate single-event upsets and latch-up. The RHBD concept utilizes enclosed gate NFET layout and adaptive bias to optimize circuit performance for infrared FPAs operating at cryogenic temperatures.

* information listed above is at the time of submission.

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