Pseudomorphic HEMT MMlC's By OrganometaIIic Vapor Phase Epitaxy

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 19959
Amount: $54,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
5020 Campbell Boulevard,, Suite E, Baltimore, MD, 21236
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr. G.v. Jagannathan
 (410) 931-7200
Business Contact
Phone: () -
Research Institution
Brimrose Corporation, Phase I objective is to use the in house developed "multipolar" low temperature/low energy, mixed, ion beam assisted MOCVD process and to demonstrate that pseudomorphic HEMT structures, comparable in quality to MBE material, can be grown at low substrate temperatures. Samples will be analyzed and provided to Air Force for further evaluation. Phase II objectives are to optimize the process and grow a pseudomorphic HEMT structure. The HEMT circuit will be fabricated, tested, and compared in performance with similar devices fabricated with MBE grown material.

* Information listed above is at the time of submission. *

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