Pseudomorphic HEMT MMlC's By OrganometaIIic Vapor Phase Epitaxy

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$54,000.00
Award Year:
1993
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
19959
Agency Tracking Number:
19959
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
5020 Campbell Boulevard,, Suite E, Baltimore, MD, 21236
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. G.v. Jagannathan
(410) 931-7200
Business Contact:
() -
Research Institution:
n/a
Abstract
Brimrose Corporation, Phase I objective is to use the in house developed "multipolar" low temperature/low energy, mixed, ion beam assisted MOCVD process and to demonstrate that pseudomorphic HEMT structures, comparable in quality to MBE material, can be grown at low substrate temperatures. Samples will be analyzed and provided to Air Force for further evaluation. Phase II objectives are to optimize the process and grow a pseudomorphic HEMT structure. The HEMT circuit will be fabricated, tested, and compared in performance with similar devices fabricated with MBE grown material.

* information listed above is at the time of submission.

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