Pseudomorphic HEMT MMlC's By OrganometaIIic Vapor Phase Epitaxy
Department of Defense
Agency Tracking Number:
Solicitation Topic Code:
Small Business Information
Brimrose Corp Of America
5020 Campbell Boulevard,, Suite E, Baltimore, MD, 21236
Socially and Economically Disadvantaged:
Dr. G.v. Jagannathan
AbstractBrimrose Corporation, Phase I objective is to use the in house developed "multipolar" low temperature/low energy, mixed, ion beam assisted MOCVD process and to demonstrate that pseudomorphic HEMT structures, comparable in quality to MBE material, can be grown at low substrate temperatures. Samples will be analyzed and provided to Air Force for further evaluation. Phase II objectives are to optimize the process and grow a pseudomorphic HEMT structure. The HEMT circuit will be fabricated, tested, and compared in performance with similar devices fabricated with MBE grown material.
* information listed above is at the time of submission.