Vanadium Doped Zinc Telluride (ZnTe:V): A Novel Non-Linear Optical Material for Sensor Protection at Visible Wavelengths
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Brimrose Corp Of America
5020 Campbell Blvd., Suite E, Baltimore, MD, 21236
AbstractDuring the proposed phase I research program, Brimrose will develop and produce an improved material for optical power limiting to protect against jamming and build a prototype of this device. Using vanadium doped zinc telluride, we will fabricate an electro-optic power limiter (EOPL) that operates at visible wavelengths. The approach of using a doped II-VI semiconductor for power limiting was previously demonstrated by Dr. Steiers research group at the Center for Photonics Technology at the University of Southern California [ref. 1 of proposal]. In close collaboration with the U.S.C. group, Brimrose has developed various transition metal doped II-VI compounds for photorefractive optical image processing. Recently, we have developed a concept of tailoring these materials for optical limiting applications. By controlling material processing parameters, material with improved response time and increased sensitivity will be produced. It has already been established that the damage threshold of ZnTe:V is superior to that of its organic and polymeric competitor materials. A limiter fabricated from this material will be compact and light as well as simple in operation without requiring the extensive or complex external optical systems that are typically required in conventional optical limiters. The device will exhibit low threshold with a response time in submicroseconds. Most importantly, it will simultaneously block a high intensity jamming beam of laser radiation while still transmitting the desired low intensity image.
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