AlxGa(1-x)N Solar Blind Detector Material Device Structure Growth & Evaluation

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$60,000.00
Award Year:
1996
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
31969
Agency Tracking Number:
31969
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
5020 Campbell Blvd., Suite E, Baltimore, MD, 21236
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
G.v. Jagannathan
(410) 668-5800
Business Contact:
() -
Research Institution:
n/a
Abstract
Phase I technical objectives of Brimrose Corporation are two fold. They are: 1) Epitaxial growth of AlxGa1-xN solar blind detector material device structure on new lattice and thermal matched substrates and evaluation of the material properties. The film growth will be carried out in Brimrose Corporation's 'Novel' ECR MOMBE Reactor using rare earth permanent magnets; 2) Preliminary epitaxial growth studies of these substrates as thin films on porous silicon for use as compliant substrate for large area growth of III-V nitrides. Subsequent Phase II objective is to optimize the growth of solar blind detector structure on both single crystal substrates as well as on thin films of these substrate material grown on porous silicon bulk substrate. Detectors will be fabricated and tested. At the end of Phase I samples of III-V nitride detector material grown on these substrates will be provided to BMDO along with the final report.

* information listed above is at the time of submission.

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