Transition Metal Doped II-VI Ternary Semi-Conductors: Development of a New Class of Materials for Superior Optical Power Limiting in the Wavelength
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Brimrose Corp.of America
5020 Campbell Blvd., Suite E, Baltimore, MD, 21236
Dr. Sudhir B. Trivedi
AbstractBrimrose proposes to develop a relatively new class of materials to build electro-optic power limiter (EOPL) to protect optical sensors against jamming and for personnel protection against laser beams. These materials are transition metal doped II-VI semiconductors, cadmium manganese telluride (Cd1-xMnxTe) and cadmium telluride selenide (CdTe1-YSeY). Field shielding optical non-linearity in these materials will allow building of optical limiters superior in performance to other conventional limiters. Field shielding non-linearity makes use of photoconductivity and the electro-optic effects. A limiter using these effects was first demonstrated in indium doped cadmium telluride by Dr Steier's research group (6) at the Center for Photonics Technology at the University of Southern California (USC) and later by Brimrose in collaboration with the USC group, using vanadium doped zinc telluride (7). Now Brimrose proposes to develop band gap engineered ternary II-VI semiconductors in order to tailor limiter operation in the wavelength range of 0.6 to 1.6 um and overcome materials related problems encountered in CdTe and ZnTe. The proposed materials will have better sensitivity and damage threshold compared to conventional organic and polymeric limiter materials and submicrosecond speed of response. Limiter built from these materials will be compact, lightweight, and will not require extensive external optical components/system for its operation. Also, it will work for both coherent as well as incoherent optical radiation. Most importantly, the field shielding non-linearity lends these materials a superior characteristics which other conventional limiters do not have. The limiter based on the proposed materials will block a high intensity jamming beam while still transmitting the desired low intensity image. During the Phase I program, Brimrose will develop the proposed limiter materials and demonstrate 'proof of principal' by building a proto-type limiters.
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