Low Temperature Homo and Hetero-Epitaxial Growth of SiC on 4H-C and Hexagonal Nb2C Substrates by Plasma
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BRIMROSE CORP. OF AMERICA
5024 Campbell Blvd, Baltimore, MD, 21236
Dr. G.v. Jagannathan
AbstractBrimrose Corporation's Phase I technical objective is to optimize the Brimrose Corporation's `ECR' Plasma Enhanced CVD processing method for growing homoepitaxially high quality SiC layers on semi-insulating 4H-SiC and heteroepitaxially on closely lattice matched and highly conducting Nb2C substrates (advantageous for fabricating vertical SiC power devices). Lowering of growth temperature will be achieved by using thermally less stable Disilane, injected down stream, and using thermally less stable and reactive alkene precursor/s such as acetylene or ethylene or propylene in the form of a Argon + alkene plasma mixture generated upstream in the CVD Reactor. Preliminary doping studies using dimethyl Aluminum Hydride and Tertiarybutyl Phosphine will be carried out. Phase II will involve optimization of n- and p-type doping, growth and full characterization of material device structures of interest to the Air Force and modeling of plasma enhanced CVD growth for single and multiwafer processing. Samples of doped and undoped epitaxial SiC films grown on 4H-SiC and Nb2C substrates and fully characterized will be delivered to the Air Force at the end of Phase I research.
* information listed above is at the time of submission.