Nanostructures for dislocation blocking in infrared detectors: Dislocation Reduction In Infrared Detector Materials Grown on Si Substrates Using Nan

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$749,995.00
Award Year:
2008
Program:
STTR
Phase:
Phase II
Contract:
W911NF-08-C-0071
Award Id:
83228
Agency Tracking Number:
A074-006-0257
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
19 Loveton Circle, Hunt Valley Loveton Center, Sparks, MD, 21152
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
064894157
Principal Investigator:
G.Jagannathan
P.I./Sr. Scientist
(410) 668-5800
gnathan@brimrose.com
Business Contact:
DianeMurray
Contract Coordinator
(936) 588-6901
dibrim@aol.com
Research Institute:
RENSSLAER POLYTECHNIC INSTITUTE
Ishwara Bhat
110 8th Street
403 West Hall
Troy, NY, 12180 3590
(518) 276-2786
Nonprofit college or university
Abstract
Large format, low cost, reliable and high performance infrared focal plane arrays are essential for the Army's Third Generation IR Imaging Technology. HgCdTe (MCT) detectors fabricated on silicon substrates are an attractive alternative generating considerable interest. State of the art technology produces CdTe buffer and MCT epitaxial layers with dislocation densities of 5x105 and 106-107/cm2 respectively on silicon substrates. In Phase I we investigated the use of a CdTe nanocrystalline buffer layer to reduce the dislocation density. The presence or the incomplete removal of SiO2 on the substrate surface posed severe problems in achieving dislocation density reduction. To overcome this problem we will use germanium coated silicon and patterned Ge/Si substrates since GeOx is much more volatile than SiOx. These substrates will be spin-coated with CdTe nanocrystals (by low cost colloidal synthesis) followed by heat treatment and epitaxial over layer growth of CdTe and MCT layers. The result will be CdTe/Ge/Si compliant substrates having dislocation density of 105/cm2 or less. These substrates will be used for the deposition of MCT device layers and fabrication of IR detectors. High quality CdTe/Ge/Si compliant substrates with low dislocation density, device quality MCT layers and fabricated MCT-IR detectors will be provided to ARL.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government