GaAs-Based MOSFET Employing Epitaxial A12O3

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$99,919.00
Award Year:
1997
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
36058
Agency Tracking Number:
36058
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
11 Tech Circle, Natick, MA, 17601
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
J. Monheiser
(508) 655-5565
Business Contact:
() -
Research Institute:
n/a
Abstract
In Phase I of this Small Business Innovation Research program we propose to fabricate a GaAs based metal-oxide-semiconductor field effect ransistor (MOSFET) employing epitaxilly deposited Al2O3 as the insulating material.The Al2O3 will be grown by gas source molecular beam epitaxy, synthesized from an elemental aluminum cell and an N2O gas source. The epitaxial method of deposition provides a one-step fabrication technique for synthesis of the transistor structures.The resulting Al2O3/GaAs heterostructures will be characterized by a variety of techniques including X-ray diffraction, Rutherford back-scattering spectroscopy, Auger electron spectroscopy, Hall effect measurements, I-V and C-V measurements. The characterization will assess the crystalline integrity of the semiconductor and oxide layers and heterostructures, and in particular their electrical properties.The Phase I results will be used to assess the potential of aluminum oxide for III-V transistor applications. If successful, a III-V CMOS device will be produced in Phase II.

* information listed above is at the time of submission.

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