Fiber Pigtailed On-Chip Mid-infrared Difference Frequency Generation in Silicon

Award Information
Agency: Department of Commerce
Branch: National Institute of Standards and Technology
Contract: 70NANB16Hh183
Agency Tracking Number: 057.01.02 (2016)
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: 9.01.02
Solicitation Number: 2016-NIST-SBIR-01
Timeline
Solicitation Year: 2016
Award Year: 2016
Award Start Date (Proposal Award Date): 2016-08-01
Award End Date (Contract End Date): 2017-01-31
Small Business Information
8500 Shoal Creek Blvd., Austin, TX, 78757-6856
DUNS: 102861262
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Swapnajit Chakravarty
 (512) 996-8833
 swapnajit.chakravarty@omegaoptics.com
Business Contact
 Swapnajit Chakravarty
Phone: (512) 996-8833
Email: swapnajit.chakravarty@omegaoptics.com
Research Institution
N/A
Abstract
Omega Optics will develop a fiber-coupled platform in strained silicon-on-sapphire (SoS) for tunable difference frequency generation in midwave infrared (MIR) with tunable continuous wave sources in the near-infrared (NIR). Stress exerted by silicon nitride on underlying silicon induces second-order nonlinear susceptibility. NIR light is coupled into silicon and MWIR light is coupled out of silicon using extensively demonstrated sub-wavelength grating couplers in both NIR and MWIR. Preliminary modal phase matched designs between pump, signal and idler indicates the potential to achieve conversion efficiency greater than 0.1W-1 with second-order nonlinear susceptibility ~10pm/V in a 1cm long silicon waveguide on sapphire. Experimentally demonstrated sub-1dB/cm propagation loss at NIR pump and signal wavelengths, ~2dB/cm propagation losses in MWIR idler wavelengths in silicon waveguides, together with less than 2.5dB insertion loss in fiber-chip polarization selective grating coupling allow high efficiency power conversion. Two-photon absorption (TPA) and in particular, TPA induced free carrier absorption (FCA), significant at MWIR will be controlled by experimentally demonstrated p-i-n geometries that reduce the silicon free carrier lifetime from nano-seconds to pico-seconds. Fabrication induced effects on coherence and geometries to achieve quasi phase matching will also be investigated, relative merits and demerits compared for implementation in Phase II.

* Information listed above is at the time of submission. *

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