Development for Radiation Hardened Advanced Electronic Circuits

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,980.00
Award Year:
2010
Program:
STTR
Phase:
Phase I
Contract:
HQ0006-10-C-7403
Award Id:
94850
Agency Tracking Number:
B09B-006-0053
Solicitation Year:
n/a
Solicitation Topic Code:
MDA 09T006
Solicitation Number:
n/a
Small Business Information
New Brunswick Technology Center, 100 Jersey Ave.Building A, New Brunswick, NJ, 08901
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
042068101
Principal Investigator:
LarryLi
Sr. Engineer
(732) 565-9500
unitedsic@unitedsic.com
Business Contact:
MauriceWeiner
Vice President
(732) 565-9500
uscweiner@unitedsic.com
Research Institute:
Rutgers University
Charles Wyckoff
3 Rutgers Plaza
New Brunswick, NJ, 8901
(732) 932-0115

Abstract
In response to SBIR topic MDA09-T006, USCI proposes to develop the first medium-level integrated circuit for radiation-tolerant applications. The advanced integrated circuit will be demonstrated based on a novel yet simple design SiC transistor that has the potential to provide a factor of 10X improvement in performance comparison to state-of-the-art. The SiC transistor can be fabricated by a substantially simplified processing technology that has been developed in-house. Phase I will be focused on the radiation-tolerant design of all critical device components, all subcircuit blocks and the final complete integration of the circuit. A large number of design paramters will be studied and optimized including the transistor radiation tolerance, switching speed, conduction loss, blocking voltage, overall efficiency and temperature dependence. Phase II will be focused on (i) the fabrication of multiple batches of the critical device components, subcircuit blocks and the completely integrated circuits, (ii) the electrical and thermal characterization of all components, subcircuit blocks and the entire IC, and (iii) the evaluation of radiation tolerance of the key device components, subcircuit blocks and the complete ICs. Phase III will be focused on improving manufacturing yield and packaging of the IC for prototype system demonstration.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government