High-Voltage and High-Frequency Power Switch for Next Generation Transmit Receiver Module Power Supplies

Award Information
Agency:
Department of Defense
Amount:
$699,000.00
Program:
SBIR
Contract:
W9113M-11-C-0025
Solitcitation Year:
2008
Solicitation Number:
2008.3
Branch:
Missile Defense Agency
Award Year:
2010
Phase:
Phase II
Agency Tracking Number:
B083-029-0365
Solicitation Topic Code:
MDA08-029
Small Business Information
United Silicon Carbide, Inc
New Brunswick Technology Center, 100 Jersey Ave.Building A, New Brunswick, NJ, 08901
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
042068101
Principal Investigator
 Leonid Fursin
 Sr. Engineer
 (732) 565-9500
 uscfursin@unitedsic.com
Business Contact
 John Dries
Title: President & CEO
Phone: (609) 731-3483
Email: uscdries@unitedsic.com
Research Institution
N/A
Abstract
In response to SBIR topic MDA08-029, USCI proposes to develop a unique 4H-SiC super-junction lateral JFET (SL-JFET), based on a novel and simple design, to solve all of the remaining problems facing the development of 4H-SiC power switches for resonant high-frequency power converter in radar applications, including the problems of high output coupling capacitance of vertical SiC MOSFETs that lead to low resonant frequency and efficiency, low channel electron mobility that leads to a high specific resistance and hence low resonant switching frequency and efficiency,low gate oxide reliability under high-temperature and high electric field which lead to MOSFET gate threshold voltage drift, and a lack of reliable passivation for GaN power switches. In Phase II, we propose to fabricate multiple batches of the optimized device targeting the high-voltage and high-frequency required for the converter, demonstrate high-frequency switching with packaged devices. We will focus on commercialization development under privately funded Phase III.

* information listed above is at the time of submission.

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