High Temperature Silicon Carbide (SiC) Gate Driver

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$119,904.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
W56HZV-11-C-0043
Agency Tracking Number:
A102-132-0628
Solicitation Year:
2010
Solicitation Topic Code:
A10-132
Solicitation Number:
2010.2
Small Business Information
United Silicon Carbide, Inc
7 Deer Park Drive,, Suite E, Monmouth Junction, NJ, 08852
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
042068101
Principal Investigator:
Petre Alexandrov
Senior Research Engineer
(732) 355-0550
uscalexandrov@unitedsic.com
Business Contact:
John Dries
President
(732) 355-0550
uscdries@unitedsic.com
Research Institution:
n/a
Abstract
Various harsh environment applications, such as the propulsion systems of Hybrid Electrical Vehicles (HEV), space systems, and energy exploration applications, require compact and efficient electrical power systems with reduced cooling requirements. Power modules based on Silicon Carbide (SiC) are able to provide the required performance in these application areas due to the unique material properties of SiC. Gate drivers, used to control high power modules, need to be placed physically close to the power switches, where operation at elevated ambient temperatures above 200°C is required and a switching frequency of approximately 200kHz is desired to benefit from the capabilities of SiC power modules. Gate drivers based on silicon devices are generally not able to operate at temperatures above 150°C because of excessive junction leakage currents. We propose to fill the need for high temperature drive electronics by developing compact, high frequency, high temperature silicon carbide (SiC) gate driver modules to control high temperature SiC transistor power modules, capable of operation in the temperature range from -40°C to 200°C, based on our innovative 4H-SiC lateral JFET technology.

* information listed above is at the time of submission.

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