Low Thermal Resistance High Power RF Devices

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$99,909.00
Award Year:
2006
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-06-C-0091
Agency Tracking Number:
053-1340
Solicitation Year:
2005
Solicitation Topic Code:
MDA05-034
Solicitation Number:
2005.3
Small Business Information
CAPESYM, INC.
6 Huron Drive, Suite 1B, Natick, MA, 01760
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
807651260
Principal Investigator
 Shariar Motakef
 President
 (508) 653-7100
 motakef@capesim.com
Business Contact
 Shariar Motakef
Title: President
Phone: (508) 653-7100
Email: motakef@capesim.com
Research Institution
N/A
Abstract
The goal of this program is to improve the thermal performance of RF power devices, by reducing their internal thermal resistance. This work will benefit both High Voltage GaAs (HV-GaAs) as well as GaN and SiC RF devices.

* information listed above is at the time of submission.

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