High Purity SiC Crystals by the HTCVD Process
Department of Defense
Missile Defense Agency
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6 Huron Drive, Suite 1B, Natick, MA, 01760
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AbstractThis program focuses on growth of uncompensated semi-insulating SiC crystals by using high purity precursor gases in a novel High Temperature CVD reactor. The crystal growth process is tailored to minimize release of impurities into the growth chamber and incorporation of these impurities into the growing crystal.
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