High Purity SiC Crystals by the HTCVD Process

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,295.00
Award Year:
2006
Program:
SBIR
Phase:
Phase I
Contract:
HQ0006-06-C-7413
Agency Tracking Number:
053-1599
Solicitation Year:
2005
Solicitation Topic Code:
MDA05-035
Solicitation Number:
2005.3
Small Business Information
CAPESYM, INC.
6 Huron Drive, Suite 1B, Natick, MA, 01760
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
807651260
Principal Investigator:
Shariar Motakef
President
(508) 653-7100
motakef@capesym.com
Business Contact:
Shariar Motakef
President
(508) 653-7100
motakef@capesym.com
Research Institution:
n/a
Abstract
This program focuses on growth of uncompensated semi-insulating SiC crystals by using high purity precursor gases in a novel High Temperature CVD reactor. The crystal growth process is tailored to minimize release of impurities into the growth chamber and incorporation of these impurities into the growing crystal.

* information listed above is at the time of submission.

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