Low Defect LWIR Substrates by the Detached Growth Method

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,891.00
Award Year:
2006
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-06-C-0090
Agency Tracking Number:
053-1373
Solicitation Year:
2005
Solicitation Topic Code:
MDA05-008
Solicitation Number:
2005.3
Small Business Information
CAPESYM, INC.
6 Huron Drive, Suite 1B, Natick, MA, 01760
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
807651260
Principal Investigator:
Matthew Overholt
Senior Engineer
(508) 653-7100
overholt@capesim.com
Business Contact:
Shariar Motakef
President
(508) 653-7100
motakef@capesim.com
Research Institution:
n/a
Abstract
This proposal is focused on the development of a novel method for the growth of low-dislocation-density, high-purity, and low-precipitate-concentration CdZnTe and CdSeTe crystals for use as substrates for MCT detectors. This work is motivated by the observation that II-VI compound semiconductors grown detached from the containment wall in space, as well as other materials grown on earth, have exhibited significantly lower dislocation density and higher purity. This program will seek to grow detached Cd(Zn,Se)Te crystals through the development of a feedback-controlled detached growth process, where the signals generated by a non-intrusive sensor are used to maintain a detachment gap of the order of 50-100 microns between the growing crystal and the ampoule.

* information listed above is at the time of submission.

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