Low Defect LWIR Substrates by the Detached Growth Method

Award Information
Agency:
Department of Defense
Amount:
$99,891.00
Program:
SBIR
Contract:
W9113M-06-C-0090
Solitcitation Year:
2005
Solicitation Number:
2005.3
Branch:
Missile Defense Agency
Award Year:
2006
Phase:
Phase I
Agency Tracking Number:
053-1373
Solicitation Topic Code:
MDA05-008
Small Business Information
CAPESYM, INC.
6 Huron Drive, Suite 1B, Natick, MA, 01760
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
807651260
Principal Investigator
 Matthew Overholt
 Senior Engineer
 (508) 653-7100
 overholt@capesim.com
Business Contact
 Shariar Motakef
Title: President
Phone: (508) 653-7100
Email: motakef@capesim.com
Research Institution
N/A
Abstract
This proposal is focused on the development of a novel method for the growth of low-dislocation-density, high-purity, and low-precipitate-concentration CdZnTe and CdSeTe crystals for use as substrates for MCT detectors. This work is motivated by the observation that II-VI compound semiconductors grown detached from the containment wall in space, as well as other materials grown on earth, have exhibited significantly lower dislocation density and higher purity. This program will seek to grow detached Cd(Zn,Se)Te crystals through the development of a feedback-controlled detached growth process, where the signals generated by a non-intrusive sensor are used to maintain a detachment gap of the order of 50-100 microns between the growing crystal and the ampoule.

* information listed above is at the time of submission.

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