Low Defect LWIR Substrates by the Detached Growth Method

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,891.00
Award Year:
2006
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-06-C-0090
Award Id:
78786
Agency Tracking Number:
053-1373
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
6 Huron Drive, Suite 1B, Natick, MA, 01760
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
807651260
Principal Investigator:
MatthewOverholt
Senior Engineer
(508) 653-7100
overholt@capesim.com
Business Contact:
ShariarMotakef
President
(508) 653-7100
motakef@capesim.com
Research Institute:
n/a
Abstract
This proposal is focused on the development of a novel method for the growth of low-dislocation-density, high-purity, and low-precipitate-concentration CdZnTe and CdSeTe crystals for use as substrates for MCT detectors. This work is motivated by the observation that II-VI compound semiconductors grown detached from the containment wall in space, as well as other materials grown on earth, have exhibited significantly lower dislocation density and higher purity. This program will seek to grow detached Cd(Zn,Se)Te crystals through the development of a feedback-controlled detached growth process, where the signals generated by a non-intrusive sensor are used to maintain a detachment gap of the order of 50-100 microns between the growing crystal and the ampoule.

* information listed above is at the time of submission.

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