Halo-hydrocarbon Growth of Bulk SiC

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$584,432.00
Award Year:
2005
Program:
STTR
Phase:
Phase II
Contract:
N00014-05-C-0373
Award Id:
70466
Agency Tracking Number:
N045-030-0202
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
611 Eljer Way, Ford City, PA, 16226
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
147973353
Principal Investigator:
OlleKordina
Chief Technology Officer
(724) 763-2111
olle@caracalsemi.com
Business Contact:
RajivEnand
CEO
(724) 763-2111
rajiv@caracalsemi.com
Research Institute:
UNIV. OF SOUTH FLORIDA
Stephen Saddow
Div of Research Grants,4202 East Fowler Ave, BEH25
Tampa, FL, 33620
(814) 973-4773
Nonprofit college or university
Abstract
We propose to use a gas fed vertical style sublimation reactor that can accommodate several different types of chemistries and be modified to a number of different approaches. The reactor is similar to the HTCVD reactor developed by Link¿ping University and Okmetic. The approach will be to initially try out different chemistries at fairly high temperatures where sublimation is a dominant process. By studying the gas phase nucleation a high degree of understanding can be derived and a moderate temperature process can be developed. Using the knowledge from these experiments and from similar experiments conducted in a CVD reactor, a low temperature CVD approach will be developed with no thermal gradient. It is believed that a growth rate of at least 1mm/h can be achieved at modest temperatures around 1900C using the correct chemistry. The main issue is to be able to transport the material to the wafer with a minimum of parasitic processes and deposit the material on the wafer in a uniform and orderly fashion. The level of success is greatly increased since both a sublimation approach and a CVD approach will be tried and compared against each other. The bulk growth of SiC is hampered by small sizes and poor quality. The quality is slowly improving, but it is of great importance to quickly develop 4-inch and 150 mm diameter SiC wafers of high quality to make use of the standard processing tools. This program is geared towards developing a cost efficient way of growing high quality wafers that may be used for power device applications and high frequency applications. It is believed that after the phase II effort, high quality crystals can be grown at low temperatures suitable for both power devices and high frequency devices. The cost of manufacture will be reduced thanks to the lower temperature and the higher quality material.

* information listed above is at the time of submission.

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