MULTIMEDIA ALZHEIMER'S EDUCATION IN ASSISTED LIVING

Award Information
Agency: Department of Health and Human Services
Branch: N/A
Contract: N/A
Agency Tracking Number: 1R43AG016554-01
Amount: $98,808.00
Phase: Phase I
Program: SBIR
Awards Year: 1999
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
CARETRENDS HEALTH EDUCATION
AND RESEARCH INSTITUTE, 1320 S MINNESOTA AVE, STE 106, SIOUX FALLS, SD, 57105
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 BRADFORD WALLENBERG
 () -
Business Contact
Phone: (605) 338-9383
Email: YLCHIU@CARETRENDS.COM
Research Institution
N/A
Abstract
Not Available A novel photoreceiver is proposed based upon the high optical sensitivity, gain and impedance transformation properties of an optoelectronic thyristor and HFET integrated circuit. As part of a monolithic optoelectronic technology, the thyristor is implemented as a vertical cavity device and is compatible with complementary HFET digital and analog electronics, with a complementary bipolar analog/digital gate configuration, and with vertical cavity lasers. The thyristor is based upon strained quantum well GaAs epitaxial growth with a natural emission frequency of 1 um. It is designed as a resonant vertical cavity detector with a three quantum well active absorbing region of about 300A and with current blocking barriers on either side resulting in detection which is highly resistant to radiation. With the absence of natural oxides in this structure, the HFET electronics is also radiation tolerant and implements high performance complementary logic because the natural threshold (+0.3V) are positive providing ample noise margins. The thyristor is unique in that it performs digital/analog detection in the off state and produces laser emission in the on state. By integrating with CHFET logic, a smart pixel may be designed to perform the functions of an emitter, modulator or detector depending on the logic levels applied to the resonant cavity device. In the integrated form, BER's of <10(sup -10) are expected based upon the dark current levels obtained in these devices. In thi

* information listed above is at the time of submission.

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