RELAXOR FERROELECTRIC PB(MG1/3NB2/3)03 FOR THIN FILM CAPACITORS

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N/A
Agency Tracking Number: 15264
Amount: $49,800.00
Phase: Phase I
Program: SBIR
Awards Year: 1991
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Trs Ceramics Inc
2820 E College Avenue Suite, J, State College, PA, 16801
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Douglas Holmes
 Principal Investigator
 (805) 498-7541
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THIS PROGRAM'S OBJECTIVE IS TO ESTABLISH THE RELAXOR FERROELECTRIC PB(MG1/2NBS/3)O3 (PMN) AS THE MATERIAL OF CHOICE FOR THIN FILM CAPACITORS IN DRAM AND ELECTRONIC PACKAGING APPLICATIONS.IN CONTRAST TO "NORMAL" FERROELECTRICS, E.G., BATIO3 AND PZT, RELAXORS OFFER HIGH DIELECTRIC CONSTANTS (K>10,000), BROAD PHASE TRANSITIONS,LOW E-FIELD DEPENDENCY OF K, AND LARGE RXC TIME CONSTANTS. IN ADDITION, THE DIELECTRIC PROPERTIES ARE LESS DEPENDENT ON MICROSTRUCTURAL FEATURES SUCH AS GRAIN SIZE OWING TO THE NANOMETER STRUCTURAL ORIGIN OF RELAXOR BEHAVIOR. IN THE PHASE I PROGRAM TWO DEPOSITION TECHNIQUES (2) SOL-GEL SPIN COATING AND (2) EXCIMER LASER ABLATION ARE PROPOSED TO PREPARE PMN-BASED FILMS. A DETAILED PROCESS-PROPERTY CORRELATION STUDY IS SCHEDULED IN PHASE I TO ALLOW OPTIMIZATION OF FILM CAPCITORS. EXTENSIVE DEVICE CHARACTERIZATION, IN TERMS OF FILM DEPOSITION AND PATTERNING TO INSURE HIGH RELIABILITY IS PLANNED FOR PHASE II INCLUDING SCALING-UP FOR ULTIMATE DRAM AND ELECTRONIC PACKAGING IMPLEMENTATION. ANTICIAPTED BENEFITS/POTENTIAL COMMERCIAL APPLICATIONS OF THE RESEARCH OR DEVELOPMENT. THE PLANNED PROGRAM THROUGH PHASE II, WILL ESTABLISH RELAXOR FERROELECTRIC (PMN-BASED) MATERIALS AS THE DIELECTRIC OF CHOICE FOR THIN FILM CAPACITORS. IN CONJUNCTION WITH THE APPROPRIATE DEPOSITION TECHNIQUE, RELAXOR THIN FILM CAPACITORS WILL HELP LEAD TO THE NEXT GENERATION FO DRAMS AND SEMI-CONDUCTOR PACKAGING.

* information listed above is at the time of submission.

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