CERMET, INC.

Company Information
Address 1019 Collier Road
Suite C1
Atlanta, GA, 30318


Information

DUNS: 826426025

# of Employees: 12


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Indium Gallium Nitride (InGaN) Solar Cell

    Amount: $734,098.00

    Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi- ...

    SBIRPhase II2010Defense Advanced Research Projects Agency Department of Defense
  2. ZnO alloy based LEDs and laser diodes

    Amount: $69,885.00

    Cermet proposes to demonstrate MgZnCdO based light emitting diodes on native substrates. This will be accomplished by focusing on three technical areas. First, Cermet will increase its existing p-ty ...

    SBIRPhase I2009Army Department of Defense
  3. Indium Gallium Nitride (InGaN) Solar Cell

    Amount: $98,000.00

    This phase I development will provide a low defect InGaN p-n junction tuned to 2.6 eV. The characteristics of the junction will be high electron and hole concentrations, low defect density and no pha ...

    SBIRPhase I2009Defense Advanced Research Projects Agency Department of Defense
  4. Nonpolar Green LEDs Based on InGaN

    Amount: $99,909.00

    Current green LEDs suffer from lower efficiency compared to blue and red LEDs. This lower efficiency hampers the use of RGB solutions to solid state light sources. This project will bridge the ¿gre ...

    SBIRPhase I2009Department of Energy
  5. InGaN-based Thin Multijunction Solar Cells

    Amount: $99,974.00

    InGaN-based thin multijunction solar cells will be developed to achieve an efficiency as high as 40%. These solar cells are of light weight and high radiaton hardness which are most suitable for space ...

    SBIRPhase I2008Air Force Department of Defense
  6. High Efficiency Electron Detector for Electron Microscopy

    Amount: $749,128.00

    This project seeks to demonstrate an improved, ultra-fast and highly-efficient electron detector for electron microscopy. In Phase I, ultrafast ,pico-second, ZnO based scintillators were developed an ...

    STTRPhase II2008Department of Energy
  7. High Efficient Photodetectors

    Amount: $99,953.00

    The goal of this effort is to demonstrate an high efficient photodetector to replace the conventional photo multiplier tubes (PMT) in gamma radiation detection process. In the proposed effort. Cermet ...

    SBIRPhase I2007Defense Threat Reduction Agency Department of Defense
  8. High Efficiency Electron Detector for Electron Microscopy

    Amount: $99,908.00

    This project seeks to demonstrate an improved, ultra fast and high efficiency electron detector for electron microscopy. The proposed approach will have high radiation resistance compared to current ...

    STTRPhase I2007Department of Energy
  9. UV TO IR LIGHT EMITTER

    Amount: $99,994.00

    Cermet, Inc in collaboration with Georgia Institute of Technology proposes to develop ZnO based light emitter with light emission wavelengths ranging from UV to IT. On successful completion of the pro ...

    STTRPhase I2006Air Force Department of Defense
  10. Development of ZnO-GaN hybrid spin LED

    Amount: $731,354.00

    Cermet, Inc in collaboration with Georgia Institute of Technology proposes to develop spin Light Emitting Diode (LED) in a 24 month Phase II program. The spin LED is a simple yet powerful spintronic ...

    STTRPhase II2005Air Force Department of Defense

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