CERMET, INC.

Company Information

Company Name
CERMET, INC.
Address
1019 Collier Road
Suite C1
Atlanta, GA, 30318
Phone
1 404-351-0005
URL
n/a
DUNS
826426025
Number of Employees
12
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,217,987.00
15
SBIR Phase II
$3,983,497.00
6
STTR Phase I
$774,081.00
10
STTR Phase II
$1,997,990.00
3

Award List

  1. Indium Gallium Nitride (InGaN) Solar Cell

    Amount: $734,232.00

    Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi- ...

    SBIR Phase II 2010 Defense Advanced Research Projects AgencyDepartment of Defense
  2. Wide Band Gap ZnO p-n Junction

    Amount: $69,401.00

    N/A

    SBIR Phase I 1999 Missile Defense AgencyDepartment of Defense
  3. Wide Band Gap ZnO p-n Junction

    Amount: $735,000.00

    N/A

    SBIR Phase II 2000 Missile Defense AgencyDepartment of Defense
  4. Seeded Melt Growth of Pure and Stabilized ZnO Bulk Single Crystals

    Amount: $66,352.00

    N/A

    SBIR Phase I 1999 Missile Defense AgencyDepartment of Defense
  5. Seeded Melt Growth of Pure and Stabilized ZnO Bulk Single Crystals

    Amount: $349,863.00

    N/A

    SBIR Phase II 2000 Missile Defense AgencyDepartment of Defense
  6. Powder Synthesis and Bulk Crystal Growth of Gallium Nitride

    Amount: $59,084.00

    The primary goal of Phase I work is to demonstrate the feasibility of synthesizing gallium nitride (GaN) powder. Secondarily, this powder will be used to grow high-purity single crystals of GaN from a ...

    SBIR Phase I 1997 Missile Defense AgencyDepartment of Defense
  7. N/A

    Amount: $76,839.00

    N/A

    SBIR Phase I 2000 Missile Defense AgencyDepartment of Defense
  8. Bulk Growth of Aluminum Nitride

    Amount: $685,100.00

    The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cerm ...

    SBIR Phase II 2003 Missile Defense AgencyDepartment of Defense
  9. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    Amount: $65,000.00

    N/A

    STTR Phase I 1999 Missile Defense AgencyDepartment of Defense
  10. N/A

    Amount: $99,587.00

    N/A

    STTR Phase I 2000 Department of Energy

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