CERMET, INC.

Basic Information

1019 Collier Road
Suite C1
Atlanta, GA, 30318

Company Profile

n/a

Additional Details

Field Value
DUNS: 826426025
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 12


  1. Indium Gallium Nitride (InGaN) Solar Cell

    Amount: $734,232.00

    Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi- ...

    SBIR Phase II 2010 Defense Advanced Research Projects AgencyDepartment of DefenseDepartment of Defense
  2. Nonpolar Green LEDs Based on InGaN

    Amount: $99,909.00

    Current green LEDs suffer from lower efficiency compared to blue and red LEDs. This lower efficiency hampers the use of RGB solutions to solid state light sources. This project will bridge the ¿gre ...

    SBIR Phase I 2009 Department of Energy
  3. ZnO alloy based LEDs and laser diodes

    Amount: $69,885.00

    Cermet proposes to demonstrate MgZnCdO based light emitting diodes on native substrates. This will be accomplished by focusing on three technical areas. First, Cermet will increase its existing p-ty ...

    SBIR Phase I 2009 ArmyDepartment of DefenseDepartment of Defense
  4. Indium Gallium Nitride (InGaN) Solar Cell

    Amount: $98,000.00

    This phase I development will provide a low defect InGaN p-n junction tuned to 2.6 eV. The characteristics of the junction will be high electron and hole concentrations, low defect density and no pha ...

    SBIR Phase I 2009 Defense Advanced Research Projects AgencyDepartment of DefenseDepartment of Defense
  5. High Efficiency Electron Detector for Electron Microscopy

    Amount: $749,128.00

    This project seeks to demonstrate an improved, ultra-fast and highly-efficient electron detector for electron microscopy. In Phase I, ultrafast ,pico-second, ZnO based scintillators were developed an ...

    STTR Phase II 2008 Department of Energy
  6. InGaN-based Thin Multijunction Solar Cells

    Amount: $99,974.00

    InGaN-based thin multijunction solar cells will be developed to achieve an efficiency as high as 40%. These solar cells are of light weight and high radiaton hardness which are most suitable for space ...

    SBIR Phase I 2008 Air ForceDepartment of DefenseDepartment of Defense
  7. High Efficiency Electron Detector for Electron Microscopy

    Amount: $99,908.00

    This project seeks to demonstrate an improved, ultra fast and high efficiency electron detector for electron microscopy. The proposed approach will have high radiation resistance compared to current ...

    STTR Phase I 2007 Department of Energy
  8. High Efficient Photodetectors

    Amount: $99,953.00

    The goal of this effort is to demonstrate an high efficient photodetector to replace the conventional photo multiplier tubes (PMT) in gamma radiation detection process. In the proposed effort. Cermet ...

    SBIR Phase I 2007 Defense Threat Reduction AgencyDepartment of DefenseDepartment of Defense
  9. UV TO IR LIGHT EMITTER

    Amount: $99,994.00

    Cermet, Inc in collaboration with Georgia Institute of Technology proposes to develop ZnO based light emitter with light emission wavelengths ranging from UV to IT. On successful completion of the pro ...

    STTR Phase I 2006 Air ForceDepartment of DefenseDepartment of Defense
  10. Development of ZnO-GaN hybrid spin LED

    Amount: $749,326.00

    Cermet, Inc in collaboration with Georgia Institute of Technology proposes to develop spin Light Emitting Diode (LED) in a 24 month Phase II program. The spin LED is a simple yet powerful spintronic ...

    STTR Phase II 2005 Air ForceDepartment of DefenseDepartment of Defense

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